Reactive Ion Etching (RIE) is a process whereby chemi-cal etching is accomplished through the bombardment of ions. This technique can be used for etching various ma-terials for top down fabrication of multi-layer thin films or functional devices such as metals, semiconductors, die-lectric materials or combinations. It also has the advantage of using multiple gases such as CF4, Argon, Oxygen and Nitrogen.

Sentech Etchlab 200 RIE System

RIE patterned Graphene device

Sentech Etchlab 200 System help and support

  • Dr Peter Petrov

    Dr Peter Petrov, Department of Materials, Imperial College London

    Personal details

    Dr Peter Petrov Principal Research Scientist Thin Film Laboratory

    +44 (0)20 7594 8156

    Support with

    General enquiries, users registrations and academic research in Thin Film Technology

    Location

    Department of Materials
    Bessemer Building (though the TYC/ LCN corridor)
    Ground Floor, B333