The Mantis Nitrides E-beam Epitaxy Deposition System is an electron beam physical vapour deposition system used for deposition of nitride thin films. It employs three high power e-beam molecular sources and a nitrogen RF plasma source.

It has a typical base pressure of 10-9 torr and operates within the temperature range from room temperature to 1000°C. It is equipped with RGA and RHEED systems for precise thin film growth control.

It consists of heated load-lock with 20x, 4” wafer storage facility. Two stage load-lock system and a separate UHV analytical chamber with a Raman spectrometer equipped with two lasers with a wavelengths of 532 and 785 nm respectively, for in- and ex-situ measurement.