The Mantis Nitrides E-beam Epitaxy Deposition System is an electron beam physical vapour deposition system used for deposition of nitride thin films. It employs three high power e-beam molecular sources and a nitrogen RF plasma source.

It has a typical base pressure of 10-9 torr and operates within the temperature range from room temperature to 1000°C. It is equipped with RGA and RHEED systems for precise thin film growth control.

It consists of heated load-lock with 20x, 4” wafer storage facility. Two stage load-lock system and a separate UHV analytical chamber with a Raman spectrometer equipped with two lasers with a wavelengths of 532 and 785 nm respectively, for in- and ex-situ measurement.

The left image shows the nitrides mantis system and the right image shows the Raman Nitrides system
The left image shows the nitrides mantis system and the right image shows the Raman Nitrides system

Mantis Nitrides E-beam Epitaxy Deposition System help and support

  • Dr Peter Petrov

    Dr Peter Petrov, Department of Materials, Imperial College London

    Personal details

    Dr Peter Petrov Principal Research Scientist Thin Film Laboratory

    +44 (0)20 7594 8156

    Support with

    General enquiries, users registrations and academic research in Thin Film Technology

    Location

    Department of Materials
    Bessemer Building (though the TYC/ LCN corridor)
    Ground Floor, B333