@article{Chen:2012:10.1002/adma.201102786,
author = {Chen, Z and Lee, MJ and Ashraf, RS and Gu, Y and Albert-Seifried, S and Nielsen, MM and Schroeder, B and Anthopoulos, TD and Heeney, M and McCulloch, I and Sirringhaus, H},
doi = {10.1002/adma.201102786},
journal = {ADVANCED MATERIALS},
pages = {647--+},
title = {High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities},
url = {http://dx.doi.org/10.1002/adma.201102786},
volume = {24},
year = {2012}
}

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TY  - JOUR
AB  - Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm(2) V(-1) s(-1) are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.
AU  - Chen,Z
AU  - Lee,MJ
AU  - Ashraf,RS
AU  - Gu,Y
AU  - Albert-Seifried,S
AU  - Nielsen,MM
AU  - Schroeder,B
AU  - Anthopoulos,TD
AU  - Heeney,M
AU  - McCulloch,I
AU  - Sirringhaus,H
DO  - 10.1002/adma.201102786
EP  - 647
PY  - 2012///
SN  - 0935-9648
SP  - 647
TI  - High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities
T2  - ADVANCED MATERIALS
UR  - http://dx.doi.org/10.1002/adma.201102786
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000299466600006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
VL  - 24
ER  - 

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