@article{Vaklev:2014:10.1002/admi.201300123,
author = {Vaklev, NL and Müller, R and Muir, BVO and James, DT and Pretot, R and van, der Schaaf P and Genoe, J and Kim, J-S and Steinke, JHG and Campbell, AJ},
doi = {10.1002/admi.201300123},
journal = {Advanced Materials Interfaces},
title = {High-Performance Flexible Bottom-Gate Organic Field-Effect Transistors with Gravure Printed Thin Organic Dielectric},
url = {http://dx.doi.org/10.1002/admi.201300123},
year = {2014}
}

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TY  - JOUR
AB  - Gravure-printed dielectric films are presented, which are 100-nm thick, have about 1-nm root mean-square surface roughness and show high electric field strength (>300 MV/m). This dielectric is combined with an ultra-thin—less than 10 nm—layer of poly(α-methylstyrene) on top which gives state-of-the-art field-effect mobility in transistors with thermally-evaporated pentacene (0.6 cm2/Vs) and zone-cast TIPS-pentacene (0.3 cm2/Vs).
AU  - Vaklev,NL
AU  - Müller,R
AU  - Muir,BVO
AU  - James,DT
AU  - Pretot,R
AU  - van,der Schaaf P
AU  - Genoe,J
AU  - Kim,J-S
AU  - Steinke,JHG
AU  - Campbell,AJ
DO  - 10.1002/admi.201300123
PY  - 2014///
TI  - High-Performance Flexible Bottom-Gate Organic Field-Effect Transistors with Gravure Printed Thin Organic Dielectric
T2  - Advanced Materials Interfaces
UR  - http://dx.doi.org/10.1002/admi.201300123
ER  - 

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