Imperial College London

Emeritus ProfessorAngusMacKinnon

Faculty of Natural SciencesDepartment of Physics

Visiting Professor
 
 
 
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Contact

 

+44 (0)20 7594 7601a.mackinnon Website CV

 
 
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Location

 

812Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

126 results found

CHASE KS, MACKINNON A, 1987, THE STATISTICS OF THE CONDUCTANCE IN TWO-DIMENSIONAL AND 3-DIMENSIONAL DISORDERED-SYSTEMS, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 20, Pages: 6189-6199, ISSN: 0022-3719

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JOHNSON EA, MACKINNON A, GOEBEL CJ, 1987, LANDAU-LEVELS NEAR AN IDEAL INTERFACE, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 20, Pages: L521-L525, ISSN: 0022-3719

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JOHNSTON R, KRAMER B, MACKINNON A, SCHWEITZER Let al., 1986, MAGNETOTRANSPORT AND ELECTRON-STATES IN TWO-DIMENSIONAL SYSTEMS INCLUDING THE EFFECT OF A RANDOM POTENTIAL AND THE BOUNDARY-CONDITIONS, SURFACE SCIENCE, Vol: 170, Pages: 256-261, ISSN: 0039-6028

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MACKINNON A, 1986, THE QUANTUM HALL-EFFECT, SCIENCE PROGRESS, Vol: 70, Pages: 521-537, ISSN: 0036-8504

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BULKA BR, KRAMER B, MACKINNON A, 1985, MOBILITY EDGE IN THE 3 DIMENSIONAL ANDERSON MODEL, ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, Vol: 60, Pages: 13-17, ISSN: 0722-3277

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MACKINNON A, 1985, THE CALCULATION OF TRANSPORT-PROPERTIES AND DENSITY OF STATES OF DISORDERED SOLIDS, ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, Vol: 59, Pages: 385-390, ISSN: 0722-3277

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SCHWEITZER L, KRAMER B, MACKINNON A, 1985, THE CONDUCTIVITY OF A TWO-DIMENSIONAL ELECTRONIC SYSTEM OF FINITE WIDTH IN THE PRESENCE OF A STRONG PERPENDICULAR MAGNETIC-FIELD AND A RANDOM POTENTIAL, ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, Vol: 59, Pages: 379-384, ISSN: 0722-3277

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KRAMER B, SCHWEITZER L, MACKINNON A, 1984, DENSITY OF STATES OF A TWO-DIMENSIONAL ELECTRON IN A STRONG MAGNETIC-FIELD AND A RANDOM POTENTIAL, ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, Vol: 56, Pages: 297-300, ISSN: 0722-3277

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MACKINNON A, 1984, PSEUDO-TOPOLOGICAL DISORDER - AN APPROACH TO THE PROPERTIES OF GLASSES, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 17, Pages: L229-L232, ISSN: 0022-3719

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MACKINNON A, 1984, LOCALIZATION IN THE LLOYD MODEL OF A DISORDERED SOLID, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 17, Pages: L289-L291, ISSN: 0022-3719

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MACKINNON A, SCHWEITZER L, KRAMER B, 1984, MAGNETO-TRANSPORT IN 2 DIMENSIONS - SOME NUMERICAL RESULTS, SURFACE SCIENCE, Vol: 142, Pages: 189-195, ISSN: 0039-6028

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SCHWEITZER L, KRAMER B, MACKINNON A, 1984, MAGNETIC-FIELD AND ELECTRON-STATES IN TWO-DIMENSIONAL DISORDERED-SYSTEMS, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 17, Pages: 4111-4125, ISSN: 0022-3719

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KING H, KRAMER B, MACKINNON A, 1983, DENSITY OF STATES AND CHARGE-DISTRIBUTION IN HYDROGENATED AMORPHOUS-SILICON, SOLID STATE COMMUNICATIONS, Vol: 47, Pages: 683-686, ISSN: 0038-1098

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KRAMER B, KING H, MACKINNON A, 1983, CHARGE FLUCTUATIONS IN HYDROGENATED AMORPHOUS-SILICON, JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol: 59-6, Pages: 73-76, ISSN: 0022-3093

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KRAMER B, KING H, MACKINNON A, 1983, LOCAL-STRUCTURE AND ELECTRONIC STATES IN HYDROGENATED AMORPHOUS-SILICON, PHYSICA B & C, Vol: 117, Pages: 944-946, ISSN: 0378-4371

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MACKINNON A, 1983, THE SCALING THEORY OF LOCALIZATION - A REPLY, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 16, Pages: 1155-1157, ISSN: 0022-3719

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MACKINNON A, 1983, THE EFFECT OF DISORDER ON THE QUANTIZED HALL CONDUCTIVITY, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 16, Pages: L945-L948, ISSN: 0022-3719

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MACKINNON A, KRAMER B, 1983, THE SCALING THEORY OF ELECTRONS IN DISORDERED SOLIDS - ADDITIONAL NUMERICAL RESULTS, ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, Vol: 53, Pages: 1-13, ISSN: 0722-3277

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MacKinnon A, 1983, The scaling theory of localisation: A reply to Kumar's objection, Journal of Physics C: Solid State Physics, Vol: 16, ISSN: 0022-3719

For comments see ibid., vol.16, p.L109 (1983) and vol.16, p.L745 (1983). The objection raised by N. Kumar to the scaling theory of localisation is discussed and refuted. The range of validity of the theory is considered.

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Kramer B, King H, MacKinnon A, 1982, LOCAL STRUCTURE AND ELECTRONIC STATES IN HYDROGENATED AMORPHOUS SILICON., Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, Vol: 117-118, Pages: 944-946, ISSN: 0165-1757

Results are presented for the local density of electron states and the charge distribution in a cluster model of hydrogenated amorphous silicon. A Weaire-Thorpe type Hamiltonian, which was suitably modified to include the H-atoms was used. It is found that if the parameters in the Hamiltonian are taken as to reproduce the H associated peaks in the valence bands, which are observed in photoemission, there is an average charge transfer from Si to H of minus 0. 27 e in agreement with earlier findings on infrared, and proton magnetic resonance spectra.

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MacKinnon A, Kramer B, 1982, MacKinnon and Kramer respond, Physical Review Letters, Vol: 49, ISSN: 0031-9007

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CZYCHOLL G, KRAMER B, MACKINNON A, 1981, CONDUCTIVITY AND LOCALIZATION OF ELECTRON-STATES IN ONE DIMENSIONAL DISORDERED-SYSTEMS - FURTHER NUMERICAL RESULTS, ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, Vol: 43, Pages: 5-11, ISSN: 0722-3277

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KRAMER B, MACKINNON A, WEAIRE D, 1981, NUMERICAL STUDY OF CONDUCTIVITY FOR THE ANDERSON MODEL IN 2 AND 3 DIMENSIONS, PHYSICAL REVIEW B, Vol: 23, Pages: 6357-6370, ISSN: 2469-9950

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MACKINNON A, 1981, TERNARY SEMICONDUCTORS, FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, Vol: 21, Pages: 149-165, ISSN: 0430-3393

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MACKINNON A, KRAMER B, 1981, ONE-PARAMETER SCALING OF LOCALIZATION LENGTH AND CONDUCTANCE IN DISORDERED-SYSTEMS, PHYSICAL REVIEW LETTERS, Vol: 47, Pages: 1546-1549, ISSN: 0031-9007

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MILLER A, MACKINNON A, WEAIRE D, 1981, BEYOND THE BINARIES - THE CHALCOPYRITE AND RELATED SEMICONDUCTING COMPOUNDS, SOLID STATE PHYSICS, Vol: 36, Pages: 119-175, ISSN: 0081-1947

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MACKINNON A, 1980, THE CONDUCTIVITY OF THE ONE-DIMENSIONAL DISORDERED ANDERSON MODEL - A NEW NUMERICAL-METHOD, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 13, Pages: 1031-1034, ISSN: 0022-3719

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MACKINNON A, 1980, ON THE ELECTRONIC-PROPERTIES OF ORDERED VACANCY COMPOUNDS, JAPANESE JOURNAL OF APPLIED PHYSICS, Vol: 19, Pages: 157-159, ISSN: 0021-4922

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MACKINNON A, KRAMER B, 1980, INTERPRETATION OF THE COMPTON PROFILES OF DIAMOND-STRUCTURE SEMICONDUCTORS, JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, Vol: 13, Pages: 37-46, ISSN: 0022-3719

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MacKinnon A, 1980, On the electronic properties of ordered vacancy compounds, Japanese Journal of Applied Physics, Vol: 19, Pages: 157-159, ISSN: 0021-4922

It is shown that some of the properties of ordered vacancy compounds can be understood in terms of a strong dependence of the highest valence bands on the positions of the anions. A pseudopotential calculation for Cd  Ga 2 Se 4 is presented in which special attention has been paid to the interaction of the band structure with the so called “breathing” mode, and which casts doubt on the meaningfulness in this case of the traditional division of energy gaps into direct and indirect. © 1980 IOP Publishing Ltd.

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