Imperial College London
Alternate

Emeritus ProfessorAngusMacKinnon

Faculty of Natural Sciences, Department of Physics

Visiting Professor
 
 
 
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Contact

 

a.mackinnon Website CV

 
 
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Location

 

811Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Skuras:1999:10.1063/1.123427,
author = {Skuras, E and Long, AR and Vögele, B and Holland, MC and Stanley, CR and Johnson, EA and MacKinnon, A},
doi = {10.1063/1.123427},
journal = {Applied Physics Letters},
pages = {973--975},
title = {Charge depletion of n<sup>+</sup>-In<inf>0.53</inf>Ga<inf>0.47</inf>As potential wells by background acceptor doping},
url = {http://dx.doi.org/10.1063/1.123427},
volume = {74},
year = {1999}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Charge depletion from 20 monolayers Of n+-In0.53Ga0.47As, uniformly doped with Si donors and embedded within Be-doped In0.53Ga0.47As, has been studied at 1.2 K by magnetotransport measurements. Electron subband energies and densities associated with the n+-In0.53Ga0.47As potential well prove sensitive to the presence of the acceptors at concentrations up to 3 × 1016 Cm-3. Agreement between the experimental data and the electronic subband structure calculated self-consistently by solving the one-dimensional Schrödinger and Poisson equations is excellent. The results suggest that intentional background acceptor doping could be a useful mechanism for tuning subband fillings and energies in potential wells formed by highly confined donors. © 1999 American Institute of Physics.
AU  - Skuras,E
AU  - Long,AR
AU  - Vögele,B
AU  - Holland,MC
AU  - Stanley,CR
AU  - Johnson,EA
AU  - MacKinnon,A
DO  - 10.1063/1.123427
EP  - 975
PY  - 1999///
SN  - 0003-6951
SP  - 973
TI  - Charge depletion of n<sup>+</sup>-In<inf>0.53</inf>Ga<inf>0.47</inf>As potential wells by background acceptor doping
T2  - Applied Physics Letters
UR  - http://dx.doi.org/10.1063/1.123427
VL  - 74
ER  -
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