Imperial College London


Faculty of EngineeringDepartment of Materials

Professor of Theory and Simulation of Materials



+44 (0)20 7594 8154a.mostofi Website




Bessemer B332Royal School of MinesSouth Kensington Campus






BibTex format

author = {Wong, D and Wang, Y and Jin, W and Tsai, H-Z and Bostwick, A and Rotenberg, E and Kawakami, R and Zettl, A and Mostofi, A and Lischner, J and Crommie, M},
doi = {10.1103/PhysRevB.98.155436},
journal = {Physical review B: Condensed matter and materials physics},
title = {Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices},
url = {},
volume = {98},
year = {2018}

RIS format (EndNote, RefMan)

AB - We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h−BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.
AU - Wong,D
AU - Wang,Y
AU - Jin,W
AU - Tsai,H-Z
AU - Bostwick,A
AU - Rotenberg,E
AU - Kawakami,R
AU - Zettl,A
AU - Mostofi,A
AU - Lischner,J
AU - Crommie,M
DO - 10.1103/PhysRevB.98.155436
PY - 2018///
SN - 1098-0121
TI - Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices
T2 - Physical review B: Condensed matter and materials physics
UR -
UR -
VL - 98
ER -