Imperial College London
Alternate

ProfessorArashMostofi

Faculty of Engineering, Department of Materials

Professor of Theory and Simulation of Materials
 
 
 
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Contact

 

+44 (0)20 7594 8154a.mostofi Website

 
 
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Location

 

Bessemer B332Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Aghajanian:2020:10.1103/PhysRevB.101.081201,
author = {Aghajanian, M and Schuler, B and Cochrane, KA and Lee, J-H and Kastl, C and Neaton, JB and Weber-Bargioni, A and Mostofi, AA and Lischner, J},
doi = {10.1103/PhysRevB.101.081201},
journal = {Physical Review B: Condensed Matter and Materials Physics},
pages = {1--6},
title = {Resonant and bound states of charged defects in two-dimensional semiconductors},
url = {http://dx.doi.org/10.1103/PhysRevB.101.081201},
volume = {101},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer WS2 using a combination of scanning tunneling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multivalley valence band structure of WS2, whereby localized states originating from the secondary valence band maximum at Γ hybridize with continuum states from the primary valence band maximum at K/K′. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
AU  - Aghajanian,M
AU  - Schuler,B
AU  - Cochrane,KA
AU  - Lee,J-H
AU  - Kastl,C
AU  - Neaton,JB
AU  - Weber-Bargioni,A
AU  - Mostofi,AA
AU  - Lischner,J
DO  - 10.1103/PhysRevB.101.081201
EP  - 6
PY  - 2020///
SN  - 1098-0121
SP  - 1
TI  - Resonant and bound states of charged defects in two-dimensional semiconductors
T2  - Physical Review B: Condensed Matter and Materials Physics
UR  - http://dx.doi.org/10.1103/PhysRevB.101.081201
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000515659700002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://journals.aps.org/prb/abstract/10.1103/PhysRevB.101.081201
UR  - http://hdl.handle.net/10044/1/78880
VL  - 101
ER  -
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