Imperial College London

DrCeciliaMattevi

Faculty of EngineeringDepartment of Materials

Senior Lecturer
 
 
 
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Contact

 

+44 (0)20 7594 0833c.mattevi

 
 
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Location

 

2.11Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Reale:2016:10.1016/j.apmt.2015.12.003,
author = {Reale, F and Sharda, K and Mattevi, C},
doi = {10.1016/j.apmt.2015.12.003},
journal = {Applied Materials Today},
pages = {11--22},
title = {From bulk crystals to atomically thin layers of group VI-transition metal dichalcogenides vapour phase synthesis},
url = {http://dx.doi.org/10.1016/j.apmt.2015.12.003},
volume = {3},
year = {2016}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Traditional synthesis methods of bulk semiconductors developed during the1970s and 1980s have recently undergone a resurgence of research interest. Physical vapour deposition (PVD), chemical vapour deposition (CVD) and metal organic chemical vapour deposition (MOCVD) have been extensively rediscovered to achieve three-atom thick metal dichalcogenides. Often defined as “graphene-analogous materials” atomically thin sulfides and selenides of group VI of transition metals have revealed a plethora of unforeseen optical, electrical and mechanical properties which make them unique candidates for future nanotechnologies, ranging from quantum electronics to large area consumer electronics. In the last few years tremendous progress has been achieved in the synthesis of high quality atomic crystals, often inspired by the consolidated synthesis methodologies of their bulk counterparts. Most interestingly, several of these methods are still used and also implemented to synthesize new compounds, expanding the range of accessible 2D materials. We review this progress and we highlight key difference in the coordination chemistry of different transition metals which are responsible for the different synthesis products.
AU - Reale,F
AU - Sharda,K
AU - Mattevi,C
DO - 10.1016/j.apmt.2015.12.003
EP - 22
PY - 2016///
SN - 2352-9407
SP - 11
TI - From bulk crystals to atomically thin layers of group VI-transition metal dichalcogenides vapour phase synthesis
T2 - Applied Materials Today
UR - http://dx.doi.org/10.1016/j.apmt.2015.12.003
VL - 3
ER -