Imperial College London


Faculty of EngineeringDepartment of Materials

Senior Lecturer



+44 (0)20 7594 0833c.mattevi




2.11Royal School of MinesSouth Kensington Campus






BibTex format

author = {Mattevi, C and Yuji, Takakuwa YT},
doi = {10.1002/pssa.201532855},
journal = {Physica Status Solidi (A) Applied Research},
pages = {2380--2386},
title = {Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics},
url = {},
volume = {213},
year = {2016}

RIS format (EndNote, RefMan)

AB - We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600 °C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart.
AU - Mattevi,C
AU - Yuji,Takakuwa YT
DO - 10.1002/pssa.201532855
EP - 2386
PY - 2016///
SN - 1862-6319
SP - 2380
TI - Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
T2 - Physica Status Solidi (A) Applied Research
UR -
UR -
VL - 213
ER -