Imperial College London


Faculty of EngineeringDepartment of Materials

Senior Lecturer



+44 (0)20 7594 0833c.mattevi




2.11Royal School of MinesSouth Kensington Campus






BibTex format

author = {Henck, H and Ben, Aziz Z and Pierucci, D and Laourine, F and Reale, F and Palczynski, P and Chaste, J and Silly, MG and Bertran, F and Le, Fevre P and Lhuillier, E and Wakamura, T and Mattevi, C and Rault, JE and Calandra, M and Ouerghi, A},
journal = {Physical Review B},
title = {Electronic band structure of two-dimensional WS2/Graphene van der Waals heterostructures},
url = {},

RIS format (EndNote, RefMan)

AB - Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs)with graphene layer in van der Waals heterostructuresoffers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements(ARPES)and Density Functional Theory(DFT)calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2valence band at K points, with a maximum splitting of 0.44 eV.By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is closeto the calculations forsuspended single layer WS2. .Our results provide an important reference for future studies of electronic properties of WS2and its applications in valleytronic devices.
AU - Henck,H
AU - Ben,Aziz Z
AU - Pierucci,D
AU - Laourine,F
AU - Reale,F
AU - Palczynski,P
AU - Chaste,J
AU - Silly,MG
AU - Bertran,F
AU - Le,Fevre P
AU - Lhuillier,E
AU - Wakamura,T
AU - Mattevi,C
AU - Rault,JE
AU - Calandra,M
AU - Ouerghi,A
SN - 2469-9950
TI - Electronic band structure of two-dimensional WS2/Graphene van der Waals heterostructures
T2 - Physical Review B
UR -
ER -