Dr. Diego Alonso-Álvarez got the PhD in 2011 at the Instituto de Microelectrónica de Madrid (Spain), working on strain balanced epitaxial stacks of InAs/GaAs quantum dots and posts for optoelectronic applications. Then he worked as research associate at Heriot Watt University, Edinburgh (UK), on spectral conversion for thin film PV modules. Diego is specialized on the epitaxial growth of III-V semiconductor nanostructures, infrared photodetectors and novel solar cell concepts, as well as their design, spectroscopic analysis and theoretical modeling. He joined the Quantum Photovoltaic group at Imperial as a Marie-Curie post-doctoral researcher in January 2013 and is involved in the photonic optimization of multi quantum well solar cells.
et al., Solcore: A multi-scale, python-based library for modelling solar cells and semiconductor materials
et al., 2018, Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy, Journal of Crystal Growth, Vol:483, ISSN:0022-0248, Pages:140-146
et al., 2018, Mid-infrared emissivity of crystalline silicon solar cells, Solar Energy Materials and Solar Cells, Vol:174, ISSN:0927-0248, Pages:607-615
et al., 2017, Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys, Semiconductor Science and Technology, Vol:32, ISSN:0268-1242
et al., 2017, Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence, Ieee Journal of Photovoltaics, Vol:7, ISSN:2156-3381, Pages:817-821