Imperial College London

Professor David W. McComb

Faculty of EngineeringDepartment of Materials

Adjunct Professor
 
 
 
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Contact

 

+44 (0)20 7594 6750d.mccomb Website

 
 
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Location

 

Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

297 results found

Khan I, Cunningham D, Littleford RE, Graham D, Smith WE, McComb DWet al., 2006, From micro to nano: Analysis of surface-enhanced resonance Raman spectroscopy active sites via multiscale correlations, ANALYTICAL CHEMISTRY, Vol: 78, Pages: 224-230, ISSN: 0003-2700

Journal article

MacKenzie M, Craven AJ, McComb DW, De Gendt Set al., 2006, Advanced nanoanalysis of high-k dielectric stacks, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 153, Pages: F215-F218, ISSN: 0013-4651

Journal article

Jin CJ, McLachlan MA, McComb DW, De La Rue RM, Johnson NPet al., 2005, Template-assisted growth of nominally cubic (100)-oriented three-dimensional crack-free photonic crystals, NANO LETTERS, Vol: 5, Pages: 2646-2650, ISSN: 1530-6984

Journal article

MacKenzie M, Craven AJ, McComb DW, De Gendt Set al., 2005, Advanced nano-analysis of high-k dielectric stacks, Pages: 323-329, ISSN: 1938-5862

Analytical electron microscopy techniques are used to investigate elemental distributions across high-k dielectric stacks with metal gates. Electron energy loss spectroscopy results from Si(100)/SiO2/HfO2/TiN and Si(100)/SiO2/HfO2/TiN/poly-Si gate stacks show evidence of interface reactions having occurred at the TiN/poly-Si interface and possibly at the Hfo2/TiN interfaces. As such, this technique offers unique capabilities to further improve understanding of the work function behavior of metal gate electrode/dielectric stacks to be used in future CMOS technologies. copyright The Electrochemical Society.

Conference paper

MacKenzie M, Weatherly GC, McComb DW, Craven AJet al., 2005, Electron energy loss spectroscopy of a TiAlN coating on stainless steel, SCRIPTA MATERIALIA, Vol: 53, Pages: 983-987, ISSN: 1359-6462

Journal article

Littleford RE, Cunningham D, Matousek P, Towrie M, Parker AW, Khan I, McComb D, Smith WEet al., 2005, Surface-enhanced resonance Raman scattering using pulsed and continuous-wave laser excitation, JOURNAL OF RAMAN SPECTROSCOPY, Vol: 36, Pages: 600-605, ISSN: 0377-0486

Journal article

Craven AJ, MacKenzie M, McComb DW, Docherty FTet al., 2005, Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy, 14th Biennial Conference on Insulating Films on Semiconductors, Publisher: ELSEVIER SCIENCE BV, Pages: 90-97, ISSN: 0167-9317

Conference paper

Cunningham D, Khan I, Littleford R, Smith WE, McComb D, Graham Det al., 2005, Characterisation of silver nanoparticles by a combined serbs mapping and tem approach., 229th National Meeting of the American-Chemical-Society, Publisher: AMER CHEMICAL SOC, Pages: U1051-U1051, ISSN: 0065-7727

Conference paper

Khan I, Cunningham D, Graham D, McComb DW, Smith WEet al., 2005, Identification and characterization of active and inactive species for surface-enhanced resonance Raman scattering, JOURNAL OF PHYSICAL CHEMISTRY B, Vol: 109, Pages: 3454-3459, ISSN: 1520-6106

Journal article

Vlachos D, Craven AJ, McComb DW, 2005, Specimen charging in X-ray absorption spectroscopy: correction of total electron yield data from stabilized zirconia in the energy range 250-915 eV, Symposium on Applications of Synchrotron Radiation to Materials, Publisher: INT UNION CRYSTALLOGRAPHY, Pages: 224-233, ISSN: 1600-5775

Conference paper

Hobbs L, Eddie I, Erwin G, Bryce AC, De la Rue RM, Roberts JS, Krauss TF, Mccomb DW, Mackenzie Met al., 2005, Reprocessing of thermally oxidized aluminum arsenide (AlAs) in epitaxial multilayers without delamination, JOURNAL OF ELECTRONIC MATERIALS, Vol: 34, Pages: 232-239, ISSN: 0361-5235

Journal article

McLachlan MA, Johnson NP, De La Rue R, McComb DWet al., 2005, Domain size and thickness control of thin film photonic crystals, JOURNAL OF MATERIALS CHEMISTRY, Vol: 15, Pages: 369-371, ISSN: 0959-9428

Journal article

Jin C, McLachlan MA, McComb DW, De La Rue RM, Johnson NPet al., 2005, Template-assisted self-assembly growth of (100) oriented three-dimensional photonic crystal, 2005 Conference on Lasers and Electro-Optics Europe (IEEE Cat. No. 05TH8795), Pages: 595-595

Journal article

Craven AJ, MacKenzie M, McComb DW, Hamilton DAet al., 2004, Application of spectrum imaging to the study of high-k dielectric stacks, Pages: 393-396, ISSN: 1478-0585

The replacement of SiO 2 as the gate oxide in CMOS by materials with higher permittivity such as HfO 2/HfSiO has encountered problems from physical and chemical changes that occur during processing of the gate stack. Spectrum imaging, used in conjunction with the analysis of electron energy loss near edge structure, is shown to be a powerful tool to investigate such changes.

Conference paper

McComb DW, Craven AJ, Hamilton DA, MacKenzie Met al., 2004, Probing local coordination environments in high-k materials for gate stack applications, APPLIED PHYSICS LETTERS, Vol: 84, Pages: 4523-4525, ISSN: 0003-6951

Journal article

Johnson NP, Khokhar AZ, McLachlan MA, McComb DW, De La Rue RMet al., 2004, Application of pressure to shift the bandgap in polystyrene based photonic crystals, Conference on Photonic Crystal Materials and Nanostructures, Publisher: SPIE-INT SOC OPTICAL ENGINEERING, Pages: 62-66, ISSN: 0277-786X

Conference paper

Hamilton DA, Craven AJ, MacKenzie M, McComb DWet al., 2004, Understanding gate oxide materials: ELNES of Hf and Zr compounds, Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003), Publisher: IOP PUBLISHING LTD, Pages: 79-82, ISSN: 0951-3248

Conference paper

Harkins P, McComb DW, MacKenzie M, Craven AJet al., 2004, ELNES of titanate perovskites - a probe of structure and bonding, Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003), Publisher: IOP PUBLISHING LTD, Pages: 119-122, ISSN: 0951-3248

Conference paper

McLachlan MA, Johnson NP, De La Rue RM, McComb DWet al., 2004, Thin film photonic crystals: synthesis and characterisation, JOURNAL OF MATERIALS CHEMISTRY, Vol: 14, Pages: 144-150, ISSN: 0959-9428

Journal article

MacKenzie M, Craven AJ, McComb DW, Hamilton DA, McFadzean Set al., 2004, Spectrum imaging of high-k dielectric stacks, Institute-of-Physics-Electron-Microscopy and Analysis-Group Conference (EMAG 2003), Publisher: IOP PUBLISHING LTD, Pages: 299-302, ISSN: 0951-3248

Conference paper

Khan I, Polwart E, McComb DW, Smith WEet al., 2004, Correlation of optical properties with structure of immoblised nanoparticles - a method for probing the mechanism of SERRS, ANALYST, Vol: 129, Pages: 950-955, ISSN: 0003-2654

Journal article

Ross IM, Rainforth WM, Scott AJ, Brown AP, Brydson R, McComb DWet al., 2004, Electron energy-loss spectroscopy (EELS) studies of an yttria stabilized TZP ceramic, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, Vol: 24, Pages: 2023-2029, ISSN: 0955-2219

Journal article

McComb DW, Craven AJ, Chioncel L, Lichtenstein AI, Docherty FTet al., 2003, Effect of short-range magnetic ordering on electron energy-loss spectra in spinels, PHYSICAL REVIEW B, Vol: 68, ISSN: 1098-0121

Journal article

Haswell R, McComb DW, Smith W, 2003, Preparation of site-specific cross-sections of heterogeneous catalysts prepared by focused ion beam milling, JOURNAL OF MICROSCOPY-OXFORD, Vol: 211, Pages: 161-166, ISSN: 0022-2720

Journal article

Paxton AT, Craven AJ, Gregg JM, McComb DWet al., 2003, Bandstructure approach to near edge structure, International Workshop on Strategies and Advances in Atomic-Level Spectroscopy and Analysis (SALSA), Publisher: WILEY-BLACKWELL, Pages: 35-44, ISSN: 0022-2720

Conference paper

Craven AJ, MacKenzie M, McComb DW, Hamilton DAet al., 2003, Application of spectrum imaging to the study of high-k dielectric stacks, Microscopy of semiconducting materials, Cambridge, March 2003, Publisher: Institute of Physics, Pages: 393-396

Conference paper

Ostanin S, Salamatov E, Craven AJ, McComb DW, Vlachos Det al., 2002, Theory of the phases and atomistic structure of yttria-doped zirconia, Physical Review B - Condensed Matter and Materials Physics, Vol: 66, Pages: 1321051-1321054, ISSN: 0163-1829

Atomistic configurations of yttria-stabilized zirconia between 3 and 10 mol % Y2O3 were relaxed using the pseudopotential technique. The results showed a phase transition to the cubic (c) (ZrO2)100-x(Y2O3)x at x ∼ 10 mol %. The electron-energy-loss near-edge spectra, calculated using the linear muffin-tin orbital method and relaxed defect geometry, agree with experiment. In the displacive limit of the double-well potential model, the vibration modes, corresponding to a soft phonon of c-ZrO2, were calculated for each composition of yttria-stabilized zirconia. The effect of anharmonicity yields the fine structure in the spectral density which is associated with stabilization at x < 10 mol %. In studying the phonon dynamics, we use the displacement probability density which quantifies accurately the transition temperature above which the c phase is stabilized.

Journal article

Ostanin S, Salamatov E, Craven AJ, McComb DW, Vlachos Det al., 2002, Theory of the phases and atomistic structure of yttria-doped zirconia, PHYSICAL REVIEW B, Vol: 66, ISSN: 1098-0121

Journal article

Ostanin S, Craven AJ, McComb DW, Vlachos D, Alavi A, Paxton AT, Finnis MWet al., 2002, Electron energy-loss near-edge shape as a probe to investigate the stabilization of yttria-stabilized zirconia, PHYSICAL REVIEW B, Vol: 65, ISSN: 1098-0121

Journal article

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