Imperial College London

Professor David W. McComb

Faculty of EngineeringDepartment of Materials

Adjunct Professor



+44 (0)20 7594 6750d.mccomb Website




Royal School of MinesSouth Kensington Campus






BibTex format

author = {Ahmed, AS and Lee, AJ and Bagués, N and McCullian, BA and Thabt, AMA and Perrine, A and Wu, P-K and Rowland, JR and Randeria, M and Hammel, PC and McComb, DW and Yang, F},
doi = {10.1021/acs.nanolett.9b02265},
journal = {Nano Lett},
pages = {5683--5688},
title = {Spin-Hall Topological Hall Effect in Highly Tunable Pt/Ferrimagnetic-Insulator Bilayers.},
url = {},
volume = {19},
year = {2019}

RIS format (EndNote, RefMan)

AB - Electrical detection of topological magnetic textures such as skyrmions is currently limited to conducting materials. Although magnetic insulators offer key advantages for skyrmion technologies with high speed and low loss, they have not yet been explored electrically. Here, we report a prominent topological Hall effect in Pt/Tm3Fe5O12 bilayers, where the pristine Tm3Fe5O12 epitaxial films down to 1.25 unit cell thickness allow for tuning of topological Hall stability over a broad range from 200 to 465 K through atomic-scale thickness control. Although Tm3Fe5O12 is insulating, we demonstrate the detection of topological magnetic textures through a novel phenomenon: "spin-Hall topological Hall effect" (SH-THE), where the interfacial spin-orbit torques allow spin-Hall-effect generated spins in Pt to experience the unique topology of the underlying skyrmions in Tm3Fe5O12. This novel electrical detection phenomenon paves a new path for utilizing a large family of magnetic insulators in future skyrmion technologies.
AU - Ahmed,AS
AU - Lee,AJ
AU - Bagués,N
AU - McCullian,BA
AU - Thabt,AMA
AU - Perrine,A
AU - Wu,P-K
AU - Rowland,JR
AU - Randeria,M
AU - Hammel,PC
AU - McComb,DW
AU - Yang,F
DO - 10.1021/acs.nanolett.9b02265
EP - 5688
PY - 2019///
SP - 5683
TI - Spin-Hall Topological Hall Effect in Highly Tunable Pt/Ferrimagnetic-Insulator Bilayers.
T2 - Nano Lett
UR -
UR -
VL - 19
ER -