Imperial College London

Professor David W. McComb

Faculty of EngineeringDepartment of Materials

Adjunct Professor



+44 (0)20 7594 6750d.mccomb Website




Royal School of MinesSouth Kensington Campus






BibTex format

author = {Asel, TJ and Yanchenko, E and Yang, X and Jiang, S and Krymowski, K and Wang, Y and Trout, A and McComb, DW and Windl, W and Goldberger, JE and Brillson, LJ},
doi = {10.1063/1.5034460},
journal = {Applied Physics Letters},
title = {Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane},
url = {},
volume = {113},
year = {2018}

RIS format (EndNote, RefMan)

AB - © 2018 Author(s). We use a combination of optical and electrostatic surface science techniques to measure electronically active native defects in multilayer GeCH3 and GeH, two-dimensional (2D) functionalized materials. Chemical processing techniques coupled with density functional theory enable us to identify the specific physical nature of both native point defects and synthesis-related impurities which can limit the optical and charge transport properties of these materials. Direct comparison of optical measurements with calculated electronic levels provides identification of these localized, deep level gap states and confirms partial H-passivation of dangling bonds, revealing synthesis and processing methods needed to control specific defects and optimize these 2D materials for emergent solid state-electronics.
AU - Asel,TJ
AU - Yanchenko,E
AU - Yang,X
AU - Jiang,S
AU - Krymowski,K
AU - Wang,Y
AU - Trout,A
AU - McComb,DW
AU - Windl,W
AU - Goldberger,JE
AU - Brillson,LJ
DO - 10.1063/1.5034460
PY - 2018///
SN - 0003-6951
TI - Identification of Ge vacancies as electronic defects in methyl- and hydrogen-terminated germanane
T2 - Applied Physics Letters
UR -
VL - 113
ER -