Imperial College London

Professor David W. McComb

Faculty of EngineeringDepartment of Materials

Adjunct Professor
 
 
 
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Contact

 

+44 (0)20 7594 6750d.mccomb Website

 
 
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Location

 

Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{O'Hara:2018:10.1021/acs.nanolett.8b00683,
author = {O'Hara, DJ and Zhu, T and Trout, AH and Ahmed, AS and Luo, YK and Lee, CH and Brenner, MR and Rajan, S and Gupta, JA and McComb, DW and Kawakami, RK},
doi = {10.1021/acs.nanolett.8b00683},
journal = {Nano Lett},
pages = {3125--3131},
title = {Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit.},
url = {http://dx.doi.org/10.1021/acs.nanolett.8b00683},
volume = {18},
year = {2018}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe x) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that, in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe2) monolayer, while for thicker films it could originate from a combination of vdW MnSe2 and/or interfacial magnetism of α-MnSe(111). Magnetization measurements of monolayer MnSe x films on GaSe and SnSe2 epilayers show ferromagnetic ordering with a large saturation magnetization of ∼4 Bohr magnetons per Mn, which is consistent with the density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe2. Growing MnSe x films on GaSe up to a high thickness (∼40 nm) produces α-MnSe(111) and an enhanced magnetic moment (∼2×) compared to the monolayer MnSe x samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveals an abrupt and clean interface between GaSe(0001) and α-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe2 monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.
AU - O'Hara,DJ
AU - Zhu,T
AU - Trout,AH
AU - Ahmed,AS
AU - Luo,YK
AU - Lee,CH
AU - Brenner,MR
AU - Rajan,S
AU - Gupta,JA
AU - McComb,DW
AU - Kawakami,RK
DO - 10.1021/acs.nanolett.8b00683
EP - 3131
PY - 2018///
SP - 3125
TI - Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit.
T2 - Nano Lett
UR - http://dx.doi.org/10.1021/acs.nanolett.8b00683
UR - https://www.ncbi.nlm.nih.gov/pubmed/29608316
VL - 18
ER -