Imperial College London
Portrait Picture

Professor Saiz

Faculty of Engineering, Department of Materials

Chair in Structural Ceramics
 
 
 
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Contact

 

+44 (0)20 7594 6779e.saiz

 
 
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Location

 

LM04.BRoyal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Al:2015:10.1016/j.jeurceramsoc.2015.02.020,
author = {Al, Nasiri N and Ni, N and Saiz, E and Chevalier, J and Giuliani, F and Vandeperre, LJ},
doi = {10.1016/j.jeurceramsoc.2015.02.020},
journal = {Journal of the European Ceramic Society},
pages = {2253--2260},
title = {Effect of microstructure and grain boundary chemistry on slow crack growth in silicon carbide at ambient conditions},
url = {http://dx.doi.org/10.1016/j.jeurceramsoc.2015.02.020},
volume = {35},
year = {2015}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Silicon carbide (SiC) is being used increasingly as a room temperature structural material in environments where moisture cannot always be excluded. Unfortunately, there have been almost no reports on slow crack growth (SCG) in SiC at room temperature. To address this gap, SCG in SiC was studied using constant stress rate and double torsion tests in water. SiC based materials were produced with a wide range of grain boundary chemistries and microstructures, which may affect their slow crack growth behaviour. To clarify the role of chemistry and microstructure respectively, solid state (SS) sintering with carbon and boron along with liquid phase (LP) sintering using oxides additives were used to produce materials with fine and coarse grains. The LP-SiC was three times more sensitive to SCG than SS-SiC materials. Moreover, the larger grained material with a higher toughness was less sensitive to SCG than the materials with fine grains.
AU  - Al,Nasiri N
AU  - Ni,N
AU  - Saiz,E
AU  - Chevalier,J
AU  - Giuliani,F
AU  - Vandeperre,LJ
DO  - 10.1016/j.jeurceramsoc.2015.02.020
EP  - 2260
PY  - 2015///
SN  - 0955-2219
SP  - 2253
TI  - Effect of microstructure and grain boundary chemistry on slow crack growth in silicon carbide at ambient conditions
T2  - Journal of the European Ceramic Society
UR  - http://dx.doi.org/10.1016/j.jeurceramsoc.2015.02.020
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000353254100005&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://www.sciencedirect.com/science/article/pii/S0955221915000722
UR  - http://hdl.handle.net/10044/1/49069
VL  - 35
ER  -
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