Imperial College London
Alternate

Professor Fang Xie

Faculty of Engineering, Department of Materials

Professor of Functional Materials
 
 
 
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Contact

 

+44 (0)20 7594 9693f.xie Website

 
 
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Location

 

1.03Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@inproceedings{Rashid:2018:10.1109/IWJT.2018.8330283,
author = {Rashid, NN and Aziz, UA and Aid, SR and Akira, S and Ikenoue, H and Xie, F and Centeno, A},
doi = {10.1109/IWJT.2018.8330283},
pages = {1--3},
title = {Effect of stress on activation during the formation of np junction in co-implanted germanium},
url = {http://dx.doi.org/10.1109/IWJT.2018.8330283},
year = {2018}
}
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RIS format (EndNote, RefMan)

TY  - CPAPER
AB  - Higher carrier mobility in germanium has made germanium as a favorable candidate to replace silicon as a device substrate for a high-performance device. Further optimization on fabrication process parameters in germanium involving ion-implantation and thermal annealing is important to form a highly activated np junction. Co-implantation technique has prompted interest due to its reported stress-induced activation; which may be due to the implementation of two atoms different in size. Combining with ultra-fast/high temperature of laser thermal annealing may promotes the improvement in activation and damage removal. This works focused on introducing stress to the germanium substrate through co-implantation of dopant ions, follows by laser thermal annealing to activate and remove the implanted damages. It is found that Raman shift of the annealed co-implanted sample can be observed with 0.2% increase in the strain value, when comparing to the single implanted sample. 12% improvement of sheet resistance can also be observed, which may be related due to the increase in stress.
AU  - Rashid,NN
AU  - Aziz,UA
AU  - Aid,SR
AU  - Akira,S
AU  - Ikenoue,H
AU  - Xie,F
AU  - Centeno,A
DO  - 10.1109/IWJT.2018.8330283
EP  - 3
PY  - 2018///
SP  - 1
TI  - Effect of stress on activation during the formation of np junction in co-implanted germanium
UR  - http://dx.doi.org/10.1109/IWJT.2018.8330283
ER  -
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