Imperial College London
Alternate

ProfessorFionnDunne

Faculty of Engineering, Department of Materials

Principal Research Fellow
 
 
 
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Contact

 

+44 (0)20 7594 2884fionn.dunne

 
 
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Location

 

104Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Zheng:2019:10.1007/s11837-019-03547-z,
author = {Zheng, Z and Dunne, FPE},
doi = {10.1007/s11837-019-03547-z},
journal = {JOM},
pages = {2576--2585},
title = {Effects of grain size, orientation, and source density on dislocation configurational energy density},
url = {http://dx.doi.org/10.1007/s11837-019-03547-z},
volume = {71},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - The effects of grain size, source density, and misorientations on the dislocation configurational energy area density are investigated using two-dimensional discrete dislocation plasticity. Grain boundaries are modeled as impenetrable to dislocations. The considered grain size ranges from   0.4μm2  to   8.0μm2 . The configurational energy area density displays a strong size dependence, similar to the stress response. Two sets of materials are considered, with low and high source/obstacle density. The high-source-density specimens exhibit negative configurational energy, implying that the dislocation structure is more stable than for isolated dislocations . The contribution of misorientation to the configurational energy density is analyzed using specimens with a single orientation or a checkerboard arrangement. The configurational energy density is found not only to depend on the dislocation spacing but also to be related to the local stress states. Low source densities lead to higher (positive) configurational energy densities.
AU  - Zheng,Z
AU  - Dunne,FPE
DO  - 10.1007/s11837-019-03547-z
EP  - 2585
PY  - 2019///
SN  - 1047-4838
SP  - 2576
TI  - Effects of grain size, orientation, and source density on dislocation configurational energy density
T2  - JOM
UR  - http://dx.doi.org/10.1007/s11837-019-03547-z
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000477633700021&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://link.springer.com/article/10.1007%2Fs11837-019-03547-z
UR  - http://hdl.handle.net/10044/1/72799
VL  - 71
ER  -
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