Imperial College London
Alternate

ProfessorJohnKilner

Faculty of Engineering, Department of Materials

Senior Research Investigator
 
 
 
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Contact

 

+44 (0)20 7594 6745j.kilner Website

 
 
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Location

 

214Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Publication Type
Year
to

547 results found

REESON KJ, HEMMENT PLF, KILNER JA, CHATER RJ, MEEKISON CD, MARSH C, BOOKER GR, DAVIS JRet al., 1986, FORMATION MECHANISM AND STRUCTURES OF BURIED OXY-NITRIDE LAYERS PRODUCED BY ION-BEAM SYNTHESIS, VACUUM, Vol: 36, Pages: 891-895, ISSN: 0042-207X

Journal article

HEMMENT PLF, REESON KJ, KILNER JA, CHATER RJ, MARSH C, BOOKER GR, CELLER GK, STOEMENOS Jet al., 1986, ION-BEAM SYNTHESIS OF THIN BURIED LAYERS OF SIO2 IN SILICON, VACUUM, Vol: 36, Pages: 877-881, ISSN: 0042-207X

Journal article

STEELE BCH, KILNER JA, DENNIS PF, MCHALE AE, VANHEMERT M, BURGGRAAF AJet al., 1986, OXYGEN-SURFACE EXCHANGE AND DIFFUSION IN FAST IONIC CONDUCTORS, SOLID STATE IONICS, Vol: 18-9, Pages: 1038-1044, ISSN: 0167-2738

  • Cite
  • Citations: 78
Journal article

REESON KJ, HEMMENT PLF, PEART RF, MEEKISON CD, MARSH C, BOOKER GR, CHATER RJ, KILNER JA, DAVIS Jet al., 1986, FORMATION MECHANISMS AND STRUCTURES OF INSULATING COMPOUNDS FORMED IN SILICON BY ION-BEAM SYNTHESIS, RADIATION EFFECTS AND DEFECTS IN SOLIDS, Vol: 99, Pages: 71-81, ISSN: 1042-0150

Journal article

Meekison CD, Booker GR, Reeson K, Hemment PLF, Chater RJ, Kilner JA, Arrowsmith RPet al., 1985, TEM, RBS AND SIMS INVESTIGATIONS OF BURIED NITRIDE LAYER STRUCTURES IN SILICON FORMED BY HIGH-DOSE N** plus ION IMPLANTATION., Pages: 489-494, ISSN: 0373-0751

Buried nitride layers have been formed by high-dose implantation of nitrogen ions into silicon. Observations by cross-sectional TEM, RBS and SIMS before and after high temperature annealing are reported. A good quality upper silicon layer was present after annealing. Plan-view TEM of the annealed specimens showed that the nitride was mainly crystalline, with a spherulitic structure. A double buried nitride layer was produced by implantation at two energies.

Conference paper

Ilkov L, Kilner JA, Steele BCH, 1985, OXYGEN DIFFUSION IN SUBSTITUTED FERRITES WITH THE SPINEL STRUCTURE., Pages: 153-160

Oxygen self diffusion coefficients have been determined, using secondary ion mass spectrometry for a variety of ceramic ferrite materials with the spinel structure. All profiles show regions where bulk diffusion predominates but at large penetration depths, short circuit diffusion down grain boundaries is evident. These results are compared with previously published data for transition metal based spinels and magnesium aluminate spinel.

Conference paper

KILNER JA, CHATER RJ, HEMMENT PLF, PEART RF, MAYDELLONDRUSZ EA, TAYLOR MR, ARROWSMITH RPet al., 1985, SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 7-8, Pages: 293-298, ISSN: 0168-583X

Journal article

HEMMENT PLF, MAYDELLONDRUSZ EA, CASTLE JE, PAYNTER R, WILSON MC, BOOKER RG, KILNER JA, ARROWSMITH RPet al., 1985, PRECIPITATION OF OXYGEN IN SINGLE-CRYSTAL SILICON IMPLANTED WITH HIGH-DOSES OF OXYGEN, THIN SOLID FILMS, Vol: 128, Pages: 125-131, ISSN: 0040-6090

Journal article

HEMMENT PLF, PEART RF, YAO MF, STEPHENS KG, ARROWSMITH RP, CHATER RJ, KILNER JAet al., 1985, SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol: 6, Pages: 292-297, ISSN: 0168-583X

Journal article

HEMMENT PLF, PEART RF, YAO MF, STEPHENS KG, CHATER RJ, KILNER JA, MEEKISON D, BOOKER GR, ARROWSMITH RPet al., 1985, HIGH-QUALITY SILICON ON INSULATOR STRUCTURES FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED NITROGEN, APPLIED PHYSICS LETTERS, Vol: 46, Pages: 952-954, ISSN: 0003-6951

Journal article

Calvo EJ, Drennan J, Kilner JA, Albery WJ, Steele BCHet al., 1984, STRUCTURE-PROPERTY BEHAVIOUR OF PEROVSKITE OXIDE ELECTROCATALYSTS., Pages: 489-511, ISSN: 0161-6374

A comprehensive study of the La-Ni-O perovskite-related family of oxides has been carried out. These studies included high resolution electron microscopy to ascertain the crystallography and morphology of the electrocatalytic particles, and preparation of dense and porous electrodes for electrochemical studies. Novel rotating ring-disk techniques have been developed to study both suprafacial and intrafacial oxygen reactions on these materials. The mobility of oxygen ions in the bulk oxide material has been investigated by SIMS diffusion profiles.

Conference paper

Steele BCH, Kilner JA, Dennis P, Tannhauser Det al., 1984, INVESTIGATIONS OF OXYGEN SURFACE EXCHANGE KINETICS ON OXIDE SURFACES USING DYNAMIC SIMS., Pages: 53-63

The kinetics of oxygen exchange reactions on oxide surfaces have been measured using gaseous mass spectrometric measurements in conjunction with solid state concentration profile determinations using dynamic SIMS. This combination of gaseous and solid state concentration measurements provides unambiguous information about the kinetics of the exchange reaction.

Conference paper

Hemment PLF, Maydell-Ondrusz EA, Stephens KG, Arrowsmith RP, Glaccum AC, Kilner JA, Butcher JBet al., 1984, CHARACTERISATION OF DEVICE GRADE SOI STRUCTURES FORMED BY IMPLANTATION OF HIGH DOSES OF OXYGEN., Pages: 281-286, ISSN: 0272-9172

Conference paper

Dennis PF, Kilner JA, 1984, Comment on “Effect of Surface Condition on Oxygen Self‐Diffusion Coefficients in Single‐Crystal Al<inf>2</inf>O<inf>3</inf>” and “Effect of Ratio of Surface Area to Volume on Oxygen Self‐Diffusion Coefficients Determined for Crushed MgO‐Al<inf>2</inf> O<inf>3</inf> Spinels”, Journal of the American Ceramic Society, Vol: 67, ISSN: 0002-7820

Journal article

HEMMENT PLF, MAYDELLONDRUSZ E, STEVENS KG, KILNER JA, BUTCHER Jet al., 1984, OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON, VACUUM, Vol: 34, Pages: 203-208, ISSN: 0042-207X

Journal article

KILNER JA, IIKOV L, 1984, OBSERVATIONS OF ELECTRON-STIMULATED DESORPTION DURING SIMS PROFILING OF INSULATORS, VACUUM, Vol: 34, Pages: 139-143, ISSN: 0042-207X

Journal article

DENNIS PF, KILNER JA, 1984, EFFECT OF SURFACE CONDITION ON OXYGEN SELF-DIFFUSION COEFFICIENTS IN SINGLE-CRYSTAL AL2O3 AND EFFECT OF RATIO OF SURFACE-AREA TO VOLUME ON OXYGEN SELF-DIFFUSION COEFFICIENTS DETERMINED FOR CRUSHED MGO-AL2O3 SPINELS - COMMENT, JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Vol: 67, Pages: C269-C271, ISSN: 0002-7820

Journal article

KILNER JA, STEELE BCH, ILKOV L, 1984, OXYGEN SELF-DIFFUSION STUDIES USING NEGATIVE-ION SECONDARY ION MASS-SPECTROMETRY (SIMS), SOLID STATE IONICS, Vol: 12, Pages: 89-97, ISSN: 0167-2738

Journal article

Hemment PLF, Maydell-Ondrusz E, Stephens KG, Arrowsmith RP, Glaccum AE, Kilner JA, Wilson MC, Booker GRet al., 1983, OXYGEN AND DEFECT DISTRIBUTIONS IN SILICON ON INSULATOR STRUCTURES FORMED BY HIGH DOSE O** plus IMPLANTATION INTO SILICON., Pages: 1855-1860

Synthesis of SiO//2 by ion implantation may become an important technology for the production of silicon on insulator (SOI) substrates which are suitable for VLSI circuit applications. Such structures may be fabricated by implantation of high doses ( greater than 10**1**8 0 cm** minus **2) of high energy ( greater than 100 keV) oxygen ions into heated single crystal silicon wafers. In this paper authors report new results from experiments carried out as part of an 'on-going' collaborative project to characterise the implanted structures.

Conference paper

Calvo EJ, Drennan J, Kilner JA, Albery WJ, Steele BCMet al., 1983, STRUCTURE-PROPERTY BEHAVIOR OF PEROVSKITE OXIDE ELECTROCATALYSTS., Pages: 1065-1066, ISSN: 0160-4619

Conference paper

Faktor JD, Kilner JA, Steele BCH, 1983, STUDY OF THE EFFECT OF ORDER-DISORDER ON THE ANION CONDUCTIVITY IN THE SYSTEM Nd//2Zr//2O//7-Nd//2Ce//2O//7., Pages: 207-210

Conference paper

Kilner JA, 1983, ROLE OF DOPANT SIZE IN DETERMINING OXYGEN ION CONDUCTIVITY IN THE FLUORITE STRUCTURE OXIDES., Pages: 189-192

  • Cite
  • Citations: 10
Conference paper

KILNER JA, 1983, FAST ANION TRANSPORT IN SOLIDS, SOLID STATE IONICS, Vol: 8, Pages: 201-207, ISSN: 0167-2738

Journal article

CALVO EJ, DRENNAN J, KILNER JA, ALBERY WJ, STEELE BCHet al., 1983, STRUCTURE-PROPERTY BEHAVIOR OF PEROVSKITE OXIDE ELECTROCATALYSTS, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 130, Pages: C125-C125, ISSN: 0013-4651

Journal article

KILNER JA, LITTLEWOOD SD, HEMMENT PLF, MAYDELLONDRUSZ E, STEPHENS KGet al., 1983, SIMS ANALYSIS OF SILICON INSULATOR STRUCTURES FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, Vol: 218, Pages: 573-578, ISSN: 0029-554X

Journal article

TANNHAUSER DS, KILNER JA, STEELE BCH, 1983, THE DETERMINATION OF THE OXYGEN SELF-DIFFUSION AND GAS SOLID EXCHANGE COEFFICIENTS FOR STABILIZED ZIRCONIA BY SIMS, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, Vol: 218, Pages: 504-508, ISSN: 0029-554X

Journal article

KILNER JA, WATERS CD, 1982, THE EFFECTS OF DOPANT CATION OXYGEN VACANCY COMPLEXES ON THE ANION TRANSPORT-PROPERTIES OF NONSTOICHIOMETRIC FLUORITE OXIDES, SOLID STATE IONICS, Vol: 6, Pages: 253-259, ISSN: 0167-2738

Journal article

KILNER JA, BROOK RJ, 1982, A STUDY OF OXYGEN ION CONDUCTIVITY IN DOPED NONSTOICHIOMETRIC OXIDES, SOLID STATE IONICS, Vol: 6, Pages: 237-252, ISSN: 0167-2738

Journal article

KILNER JA, STEELE BCH, 1982, THE EFFECT OF ION SIZE ON THE ENERGY OF ASSOCIATION BETWEEN OXYGEN VACANCIES AND DOPANT CATIONS IN OXIDE SOLID ELECTROLYTES, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol: 129, Pages: C143-C143, ISSN: 0013-4651

Journal article

KILNER JA, DRENNAN J, DENNIS P, STEELE BCHet al., 1981, A STUDY OF ANION TRANSPORT IN BISMUTH BASED OXIDE SYSTEMS BY ELECTRICAL-CONDUCTIVITY AND SECONDARY ION MASS-SPECTROSCOPY (SIMS), SOLID STATE IONICS, Vol: 5, Pages: 527-530, ISSN: 0167-2738

Journal article

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