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@article{Wong:2018:10.1103/PhysRevB.98.155436,
author = {Wong, D and Wang, Y and Jin, W and Tsai, H-Z and Bostwick, A and Rotenberg, E and Kawakami, R and Zettl, A and Mostofi, A and Lischner, J and Crommie, M},
doi = {10.1103/PhysRevB.98.155436},
journal = {Physical review B: Condensed matter and materials physics},
title = {Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices},
url = {http://dx.doi.org/10.1103/PhysRevB.98.155436},
volume = {98},
year = {2018}
}

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TY  - JOUR
AB  - We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h−BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.
AU  - Wong,D
AU  - Wang,Y
AU  - Jin,W
AU  - Tsai,H-Z
AU  - Bostwick,A
AU  - Rotenberg,E
AU  - Kawakami,R
AU  - Zettl,A
AU  - Mostofi,A
AU  - Lischner,J
AU  - Crommie,M
DO  - 10.1103/PhysRevB.98.155436
PY  - 2018///
SN  - 1098-0121
TI  - Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices
T2  - Physical review B: Condensed matter and materials physics
UR  - http://dx.doi.org/10.1103/PhysRevB.98.155436
UR  - http://hdl.handle.net/10044/1/65198
VL  - 98
ER  -

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