Publications
195 results found
Gocalinska A, Manganaro M, Juska G, et al., 2014, Unusual nanostructures of "lattice matched" InP on AlInAs, Applied Physics Letters, Vol: 104, ISSN: 0003-6951
ABSTRACTWe show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology.The formation of interfaces with structural, compositional, and morphological integrity is crucial for the performance of many devices. Imperfect interfaces produce broadening in photoluminescence line widths and degrade electronic transport by enhanced scattering. Structure and morphology can be optimized through controlled sample preparation and a judicious choice of growth conditions. However, while semiconductor alloys enable band gaps to be engineered, the attainment of compositional uniformity presents altogether different challenges. Indeed, in III–V systems, phase separation is common when alloys are deposited onto a lattice-matched substrate, for example, by molecular-beam epitaxy (MBE).1 Our focus here is Al1−xInxAs, a large band-gap (lattice-matched) material used in heterostructures with InP. When produced by MBE (in specific, but a relatively large range of growth conditions), this alloy is known to exhibit clustering when deposited onto InP.2,3 Interestingly, theoretical studies4,5 have shown that this type of incipient spinodal decomposition is forbidden if the surface of the alloy film is perfectly flat because of the regions of additional strain created with respect to the random alloy, which has zero mean strain everywhere. But on a surface with roughness, phase separation can become more active at roughness-i
Zhang Z, Pan JS, Chai JW, et al., 2011, Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface, SURFACE SCIENCE, Vol: 605, Pages: 1852-1860, ISSN: 0039-6028
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- Citations: 3
Elder WJ, Ward RM, Zhang J, 2011, Double-group formulation of k . p theory for cubic crystals, PHYSICAL REVIEW B, Vol: 83, ISSN: 2469-9950
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- Citations: 7
Matmon G, Paul DJ, Lever L, et al., 2010, Si/SiGe quantum cascade superlattice designs for terahertz emission, JOURNAL OF APPLIED PHYSICS, Vol: 107, ISSN: 0021-8979
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- Citations: 21
Zhang Z, Pan JS, Zhang J, et al., 2010, Kinetics of Ge diffusion, desorption and pit formation dynamics during annealing of Si<sub>0.8</sub>Ge<sub>0.2</sub>/Si(001) virtual substrates, PHYSICAL CHEMISTRY CHEMICAL PHYSICS, Vol: 12, Pages: 7171-7183, ISSN: 1463-9076
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- Citations: 16
Chiam SY, Chim WK, Ren Y, et al., 2008, Effects of annealing on the valence band offsets between hafnium aluminate and silicon, JOURNAL OF APPLIED PHYSICS, Vol: 104, ISSN: 0021-8979
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- Citations: 25
Chiam SY, Chim WK, Pi C, et al., 2008, Band alignment of yttrium oxide on various relaxed and strained semiconductor substrates, JOURNAL OF APPLIED PHYSICS, Vol: 103, ISSN: 0021-8979
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- Citations: 43
Ross IM, Gass M, Walther T, et al., 2008, Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures, 15th Conference on Microscopy of Semiconducting Materials, Publisher: SPRINGER-VERLAG BERLIN, Pages: 269-+, ISSN: 0930-8989
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- Citations: 3
McGee WM, Williams RS, Ashwin MJ, et al., 2007, Structure, morphology, and optical properties of Ga<i><sub>x</sub></i>In<sub>1-<i>x</i></sub>N<sub>0.05</sub>As<sub>0.95</sub> quantum wells:: Influence of the growth mechanism, PHYSICAL REVIEW B, Vol: 76, ISSN: 2469-9950
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- Citations: 15
Paul D J, Matmon G, Townsend P, et al., 2007, A Review of Progress Towards Terahertz Si/SiGe Quantum Cascade Lasers, IETE Journal of Research, Vol: 53, Pages: 285-292, ISSN: 0377-2063
Suet Z, Paul DJ, Zhang J, et al., 2007, Si/SiGe <i>n</i>-type resonant tunneling diodes fabricated using <i>in situ</i> hydrogen cleaning, APPLIED PHYSICS LETTERS, Vol: 90, ISSN: 0003-6951
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- Citations: 9
Chiam SY, Chim WK, Huan ACH, et al., 2007, Coverage dependent reaction of yttrium on silicon and the oxidation of yttrium silicide investigated by x-ray photoelectron spectroscopy, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol: 25, Pages: 500-507, ISSN: 0734-2101
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- Citations: 8
Li Q, Tok ES, Zhang J, et al., 2007, Reassessment of the molecular mechanisms for H<sub>2</sub> thermal desorption pathways from Si<sub>(1-<i>x</i>)</sub>Ge<i><sub>x</sub></i>(001)-(2x1) surfaces, JOURNAL OF CHEMICAL PHYSICS, Vol: 126, ISSN: 0021-9606
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- Citations: 12
Williams RS, McGee WM, Ashwin MJ, et al., 2007, Wavelength control across the near IR spectrum with GaInNAs, APPLIED PHYSICS LETTERS, Vol: 90, ISSN: 0003-6951
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- Citations: 4
Califano M, Vinh NQ, Phillips PJ, et al., 2007, Interwell relaxation times in <i>p</i>-Si/SiGe asymmetric quantum well structures:: Role of interface roughness, PHYSICAL REVIEW B, Vol: 75, ISSN: 1098-0121
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- Citations: 34
Mitrovic IZ, El Mubarek HAW, Buiu O, et al., 2007, SiGeC HBTs: impact of C on device performance, Nanoscaled Semiconductor-on-Insulator structures and devices, Publisher: Springer, Pages: 171-178
Lynch SA, Paul DJ, Townsend P, et al., 2006, Toward silicon-based lasers for terahertz sources, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol: 12, Pages: 1570-1578, ISSN: 1077-260X
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- Citations: 30
Stoffel M, Zhang J, Schmidt OG, 2006, Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si<sub>0.7</sub>Ge<sub>0.3</sub> virtual substrates, 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), Publisher: IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG, Pages: 921-925, ISSN: 1745-1353
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- Citations: 2
Zhang J, Turner SG, Chiam SY, et al., 2006, Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching, SURFACE SCIENCE, Vol: 600, Pages: 2288-2292, ISSN: 0039-6028
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- Citations: 9
Chiam SY, Chim WK, Huan ACH, et al., 2006, Investigation of silicon diffusion into yttrium using x-ray photoelectron spectroscopy, APPLIED PHYSICS LETTERS, Vol: 88, ISSN: 0003-6951
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- Citations: 7
Seng HL, Osipowicz T, Zhang J, et al., 2005, Observation of local lattice tilts in strain-relaxed Si<sub>1-<i>x</i></sub>Ge<i><sub>x</sub></i> using high resolution channeling contrast microscopy, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, Vol: 81, Pages: 1163-1166, ISSN: 0947-8396
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- Citations: 2
Lynch SA, Townsend P, Matmon G, et al., 2005, Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon, APPLIED PHYSICS LETTERS, Vol: 87, ISSN: 0003-6951
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- Citations: 26
Shi J, Chuan Kang H, Tok ES, et al., 2005, Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2x1), JOURNAL OF CHEMICAL PHYSICS, Vol: 123, ISSN: 0021-9606
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- Citations: 15
Karunaratne MSA, Willoughby AFW, Bonar JM, et al., 2005, Effect of point defect injection on diffusion of boron in silicon and silicon-germanium in the presence of carbon, JOURNAL OF APPLIED PHYSICS, Vol: 97, ISSN: 0021-8979
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- Citations: 8
Zhang J, Neave JH, Li XB, et al., 2005, GSMBE growth and structural characterisation of SiGeC layers for HBT, 13th International Conference on Molecular Beam Epitaxy (MBE XII), Publisher: ELSEVIER SCIENCE BV, Pages: 505-511, ISSN: 0022-0248
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- Citations: 3
Zhang J, Li XB, Neave JH, et al., 2005, SiGe quantum cascade structures for light emitting devices, 13th International Conference on Molecular Beam Epitaxy (MBE XII), Publisher: ELSEVIER, Pages: 488-494, ISSN: 0022-0248
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- Citations: 7
Seng HL, Osipowicz T, Zhang J, et al., 2005, Determination of local lattice tilt in Si<sub>1-x</sub>Ge<sub>x</sub> virtual substrate using high resolution channeling contrast microscopy, 9th International Conference on Nuclear Microprobe Technology and Applications, Publisher: ELSEVIER SCIENCE BV, Pages: 446-451, ISSN: 0168-583X
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- Citations: 1
Paul DJ, Temple M, Olsen SH, et al., 2005, Strained-Si n-MOS surface-channel and buried Si<sub>0.7</sub>Ge<sub>0.3</sub> compressively- strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process, 2nd International SiGe Technology and Device Meeting (ISTDM), Publisher: ELSEVIER SCI LTD, Pages: 343-346, ISSN: 1369-8001
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- Citations: 2
El Mubarek HAW, Wang P, Price R, et al., 2005, Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation, 2nd International SiGe Technology and Device Meeting (ISTDM), Publisher: ELSEVIER SCI LTD, Pages: 103-109, ISSN: 1369-8001
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- Citations: 3
Li XB, Neave JH, Norris DJ, et al., 2005, Growth and structural characterisation of Si/SiGe hetero structures for optoelectronic applications, Symposium of the European-Materials-Research-Society on Si-Based Photonics - Towards True Monolithic Integration, Publisher: ELSEVIER SCIENCE BV, Pages: 855-858, ISSN: 0925-3467
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