Publications
200 results found
Xu B, Fobelets K, 2013, Efficiency Improvement of Silicon Nanowire Arrays (NWAs) Thermoelectric Power Generation (TEG) by Spin On Doping (SOD), 223rd ECS Meeting
Rahman T, Fobelets K, Meziani YM, et al., 2013, Highly Doped Nanowire Array for Use in Hybrid Silicon/Polymer Junction Solar Cells, 223rd ECS Meeting
Fobelets K, Li C, Coquillat D, et al., 2013, THz response of silicon nanowire arrays, Journal of Materials Chemistry
Xu B, Li CB, Myronov M, et al., 2013, n-Si–p-Si1−xGex nanowire arrays for thermoelectric power generation, Solid State Electronics, Vol: 83, Pages: 107-112
The output power of a discrete assembly of n-Si–p-Si1−xGex (0 ⩽ x ⩽ 0.4) thermoelectric generators is measured as a function of load resistance. The influence of Ge content and nanowire structures on the performance of thermoelectric devices is evaluated in measurements around room temperature. The nanowire arrays are etched using a metal induced local oxidation and etching process, based on self-assembled Ag nanoparticles and HF. The use of nanowires and SiGe with dimensions smaller than 30 μm, is beneficial for an improvement of, at least, a factor of 10 in the output power. However, better performance improvements can be obtained by optimising the thermal and electrical contact resistances at the interfaces. Optimisation of the electrical contact results in a performance boost by a factor of 25.
Xu B, Li C, Myronov M, et al., 2012, Si <inf>1-x</inf>Ge <inf>x</inf> nanowire arrays for thermoelectric power generation, Pages: 76-77
Thermoelectricity offers an excellent clean energy generation opportunity and has attracted renewed attention in the last few decades. The low conversion efficiency and high costs currently limit its practical application. Much effort is still needed to enhance its efficiency and reduce its cost. Nanostructures have been proven to greatly enhance the thermoelectric figure of merit (ZT) because of increased phonon scattering at the interfaces. It has been demonstrated that single Si nanowires (NWs) exhibit a 60 times higher ZT than Si bulk. Meanwhile, SiGe alloys can also reduce the thermal conductivity via alloy scattering without deteriorating the other performance parameters such as Seebeck coefficient, S and electrical conductivity, . SiGe NWs thus promise to offer even better thermoelectric performance than Si. In this work, we will show our recent research results on the fabrication and thermoelectric characterisation of SiGe nanowire arrays (NWAs). The NWAs are arrays of millions of parallel upstanding NWs attached to Si bulk, rather than single NWs as studied before. A Seebeck coefficient of S 1.1 mV/K is measured for the SiGe NWAs/Si bulk composite and is independent of Ge fraction, consistent with the theoretically expected value. The temperature drop across the SiGe NWA is consistently larger than across a similar Si NWA, indicating reduced thermal conductivity of the SiGe NWs.The use of SiGe improves the output power with a factor of 8 in the bulk TEG configuration. The use of SiGe NWAs in the p-leg only, increases the output power by a factor of 5 in comparison with the Si NWA TEG. These improvements are due to the reduction of the thermal conductance of the SiGe NWs and the reduction of the electrical contact resistance of the SiGe-based wires while the Seebeck coefficient remains unaffected © 2012 IEEE.
Fobelets K, Durrani ZAK, Ding PW, et al., 2012, Electrical transport in polymer covered Si nanowires, IEEE Transactions on nanotechnology, Vol: 11, Pages: 661-665, ISSN: 1536-125X
The influence of polymer layers wrapped around ntype Si nanowires on their electrical characteristics is investigated. The nanowires are fabricated via metal induced excessive oxidation and dissolution of Si, and have a diameter of ~350 nm. Single wires are covered by various polymer layers. The polymers used, are both insulating (PMMA, PE, PS, and PEO) and semiconducting (PEDOT:PSS). Four-point probe measurements are used to measure the conductivity changes of single nanowires. The nanowire resistivity increases with PE and PMMA coverage but decreases with PEO coverage. The changes are attributed to carrier exchange between the polymer and nanowire. The measurements also confirm active electron trapping with PE coverage that is not observed with the other polymers.
Meziani YM, Garcia E, Calvo J, et al., 2012, Detection of Terahertz Radiation from Submicron Plasma Waves Transistors, Bolometers, Publisher: Intech, ISBN: 978-953-51-0235-9
Li CB, Xu B, Durrani ZAK, et al., 2012, Thermoelectric characteristics of SiGe nanowire arrays as a function of Ge concentration, 9th European Conference on Thermoelectrics (ECT), Publisher: AMER INST PHYSICS, Pages: 417-420, ISSN: 0094-243X
Mylvaganam T, Fobelets K, Jaimoukha I, 2012, Optimal Design of Nanowire Array Based Thermocouple, 9th European Conference on Thermoelectrics (ECT), Publisher: AMER INST PHYSICS, Pages: 17-20, ISSN: 0094-243X
Meziani YM, Garcia-Garcia E, Velazquez-Perez JE, et al., 2012, Terahertz Imaging Using Strained-Si MODFETs as Sensors, Silicon-Germanium Technology and Device Meeting (ISTDM)
Xu B, Li CB, Myronov M, et al., 2012, Si1-xGex Nanowire Arrays for Thermoelectric Power Generation, Silicon-Germanium Technology and Device Meeting (ISTDM)
Xu B, Li C, Myronov M, et al., 2012, n-Si – p-Si1-xGex nanowire arrays for thermoelectric power generation, Solid State Electronics
Meziani YM, Garcia-Garcia E, Velazquez-Perez JE, et al., 2012, Terahertz Imaging Using Strained-Si MODFETs as Sensors, Solid State Electronics
Xu B, Li C, Thielemans K, et al., 2012, Thermoelectric performance of Si0.8Ge0.2 nanowire arrays, IEEE Transactions on Electron Devices, Vol: 59, Pages: 3193-3198
Li C, Fobelets K, Durrani ZAK, 2012, Study of two-step electroless etched Si nanowire arrays, Applied Mechanics and Materials, Pages: 3284-3288
Li C, Krali E, Fobelets K, et al., 2012, Conductance Modulation of Si Nanowire Arrays, Applied Physics Letters
Saremi-Yarahmadi S, Fobelets K, Toumazou C, 2011, Coupled RF Inductive sensors for monitoring the pH of electrolyte solutions, International conference on dielectric liquids
Grigelionis T, Fobelets K, Vincent B, et al., 2011, Mobility of Holes in Nanometer Ge-on-Si <i>p</i>-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures, 40th Jaszowiec International School and Conference on the Physics of Semiconductors, Publisher: POLISH ACAD SCIENCES INST PHYSICS, Pages: 933-935, ISSN: 0587-4246
Li CB, Fobelets K, Durrani ZAK, 2011, Study of two-step electroless etched Si nanowire arrays, 2010 Int. Conf. Nano Science and Technology
Moubarak Meziani Y, Garcia E, Velazquez E, et al., 2011, Strained silicon modulation field-effect transistor as a new sensor of terahertz radiation, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 26, ISSN: 0268-1242
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Fobelets K, Rumyantsev S, Vincent B, et al., 2011, Trap density in Ge-on-Si pMOSFETs with Si intermediate layers, ICNF2011
Fobelets K, Calvo-Gallego J, Velazquez-Perez JE, 2011, Effect of the gate scaling on the analogue performance of s-Si CMOS devices, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 26, ISSN: 0268-1242
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- Citations: 1
Saremi-Yarahmadi S, Fobelets K, Toumazou C, 2011, Coupled RF inductive sensors for monitoring the conductivity of electrolyte solutions, International symposium on medical information & communication technology
Li CB, Fobelets K, Tymieniecki MS, et al., 2011, Bunch-free Electroless-etched Si Nanowire Array, 218th ECS Meeting
Li C, Fobelets K, Jalal SNS, et al., 2011, Influence of chemical modification on the electrical properties of Si nanowire arrays, International Conference on Materials Science and Engineering Applications, Publisher: TRANS TECH PUBLICATIONS LTD, Pages: 1331-1335, ISSN: 1022-6680
li C, Fobelets K, Tymieniecki MS, et al., 2011, Bunch-free electroless etched Si nanowire array, ECS Transactions, Vol: 38, Pages: 9-13
Li C, Fobelets K, Jalal SNS, et al., 2011, Influence of chemical modification on the electrical properties of Si nanowire arrays, Advanced Materials Research, Pages: 1331-1335
Grillionis T, Fobelets K, Vincent B, et al., 2011, Mobility of holes in nanometer Ge-on-Si p-type metal-oxide-semiconductor field effect transistors at low temperatures, Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electrodynamics, Vol: 5, Pages: 933-935
Saouros S, Li CB, Durrani ZAK, et al., 2011, Seebeck coefficient and electical conduction changes of Si nanowire arrays filled with polymers, 9th European Conference on Thermoelectrics
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