Publications
200 results found
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2005, DC performance of deep submicrometer Schottky-gated n-channel Si:SiGe heterostructure field effect transistors at low temperatures, IEEE Trans Electron Dev, Vol: 52, Pages: 2067-2074
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2005, DC performance of deep submicrometer Schottky-gated n-channel Si:SiGe HFETs at low temperatures, IEEE Transactions on Electron Devices, Vol: 52, Pages: 2067-2074, ISSN: 0018-9383
Michelakis K, Despotopoulos S, Papavassiliou C, et al., 2005, SiGe HMOSFET monolithic inverting current mirror, SOLID-STATE ELECTRONICS, Vol: 49, Pages: 591-594, ISSN: 0038-1101
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- Citations: 1
Vilches A, Loga R, Rahal M, et al., 2005, Monolithic large-signal transimpedance amplifier for use in multi-gigabit, short-range optoelectronic interconnect applications, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, Vol: 52, Pages: 102-106, ISSN: 1057-7130
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- Citations: 5
Ding PW, Fobelets K, Velazquez-Perez JE, 2005, Simulations of embedded-gate screen-grid field effect transistor, Proceedings of PREP2005, 30 - 31 March 2005, UK
Fobelets K, Velazquez JE, 2005, Noise in nanometric s-Si MOSFET for low-power applications, Noise and Fluctuations, Vol: 780, Pages: 275-278, ISSN: 0094-243X
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2004, Dynamic threshold mode operation of p-channel Si and strained-SiGe MOSFETs between 10 K and 300 K, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 19, Pages: L95-L98, ISSN: 0268-1242
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- Citations: 1
Fobelets K, Jeamsaksiri W, Papavasilliou C, et al., 2004, Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies, SOLID-STATE ELECTRONICS, Vol: 48, Pages: 1401-1406, ISSN: 0038-1101
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- Citations: 11
Vilches A, Michelakis K, Fobelets K, et al., 2004, Buried-channel SiGe HMODFET device potential for micropower applications, SOLID-STATE ELECTRONICS, Vol: 48, Pages: 1423-1431, ISSN: 0038-1101
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- Citations: 5
Michelakis K, Vilches A, Papavassiliou C, et al., 2004, Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol: 51, Pages: 1309-1314, ISSN: 0018-9383
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- Citations: 7
Vilches A, Loga R, Michelakis K, et al., 2004, Analogue micropower FET techniques review, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 19, Pages: R19-R34, ISSN: 0268-1242
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- Citations: 3
Vilches A, Fobelets K, Michelakis K, et al., 2004, SiGe HMODFET 'KAIST' micropower model and amplifier realization, IEEE Transactions on Circuits and Systems I, Vol: 51, Pages: 1100-1105, ISSN: 1057-7122
Gaspari V, Fobelets K, Ding PW, et al., 2004, Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode, IEEE ELECTRON DEVICE LETTERS, Vol: 25, Pages: 334-336, ISSN: 0741-3106
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- Citations: 7
Velázquez JE, Fobelets K, Gaspari V, 2004, Study of current fluctuations in deep-submicron Si/SiGe n-channel MOSFET:: impact of relevant technological parameters on the thermal noise performance, 13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13), Publisher: IOP PUBLISHING LTD, Pages: S191-S194, ISSN: 0268-1242
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- Citations: 2
Michelakis K, Despotopoulos S, Gaspari V, et al., 2004, SiGe virtual substrate HMOS transistor for analogue applications, 1st International SiGe Technology and Device Meeting (ISTDM), Publisher: ELSEVIER SCIENCE BV, Pages: 386-389, ISSN: 0169-4332
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- Citations: 4
Fobelets K, Tan TL, Thielemans K, et al., 2004, Colour coding Ge concentrations in Si<sub>1-<i>x</i></sub>Ge<i><sub>x</sub></i> by bevelling and oxidation:: CABOOM, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 19, Pages: 510-515, ISSN: 0268-1242
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- Citations: 2
Yuk HS, Fobelets K, Tate T, et al., 2004, Formation of novel SiGe-on-insulator substrate structures by Ge+ implantation and oxidation for stained-Si-MOSFET technology, 2004 MRS spring meeting, USA
Gaspari V, Fobelets K, Olsen S, et al., 2004, Temperature sensitivity of DC operation of sub-micron strained-Si MOSFETs, Electronic materials conference 2004, University of Notre Dame in Notre Dame, Indiana, USA, 23 - 25 June 2004
Yuk HS, Fobelets K, Tate T, 2004, Formation of novel SiGe-on-Insulator substrate structures by Ge+ implantation and O2 gas annealing, ULIS 2004 workshop, Leuven, Belgium
Velazquez JE, Fobelets K, Gaspari V, 2004, Impact of the scaling on the noise performance of deep-submicron Si/SiGe n-channel FETs, Bellingham, Conference on noise in devices and circuits, Maspalomas, Spain, 26 - 28 May 2004, Publisher: Spie-Int Society Optical Engineering, Pages: 573-580
Fobelets K, Alaudeen A, Ahmad MM, et al., 2004, Analysis of steam oxidation of crystalline Si1-xGex using AFM and CABOOM, Joint international meeting the Electrochemical Society, the Electrochemical Society of Japan and the Japan Society of Applied Physics, Honolulu, Hawaii, Hilton Hawaiian Village, 3 - 8 October 2004, Publisher: Electrochemical Society Inc., Pennington, NJ 08534-2896, United States, Pages: 175-179
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2004, Anomalous behaviour of buried strained-Si channel Heterojunction FETs at low temperatures, Joint international meeting the Electrochemical Society, the Electrochemical Society of Japan and the Japan Society of Applied Physics, Honolulu, Hawaii, Hilton Hawaiian Village, 3 - 8 October 2004
Olsen SH, O'Neill AG, Norris DJ, et al., 2003, Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs, SOLID-STATE ELECTRONICS, Vol: 47, Pages: 1289-1295, ISSN: 0038-1101
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- Citations: 13
Vilches A, Fobelets K, Michelakis K, et al., 2003, Monolithic micropower amplifier using SiGe <i>n</i>-MODFET device, ELECTRONICS LETTERS, Vol: 39, Pages: 884-886, ISSN: 0013-5194
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- Citations: 11
Ferguson RS, Fobelets K, Ahmad MM, et al., 2003, Determining the thickness and composition of SiGe heterostructures using an optical microscope, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol: 18, Pages: 390-392, ISSN: 0268-1242
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- Citations: 1
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2003, Effect of temperature on the transfer characteristic of a 0.5m-gate Si:SiGe depletion-mode n-MODFET, ISTDM 2003, Japan, 15 - 17 January 2003
Yuk HS, Tate T, Fobelets K, et al., 2003, B - 1 "Fabrication technique of SiGe-on-Insulator (SGOI) substrates by Ge+ implantation for strained-Si SiGe hetero-structure-CMOS technologies", International meeting for future of electron devices, Osaka, Japan, July 2003, Publisher: IEEE, Pages: 15-16
Gaspari V, Fobelets K, Velazquez-Perez JE, et al., 2003, Thermal study of 0.5um-gate Si/SIGe depletion-mode n-MOSFETs, CDE-2003, Calella (Barcelona), Spain
Li SM, Fobelets K, Velazquez-Perez JE, et al., 2003, Influence of substrate thinning on the threshold voltage of Si:SiGe Heterojunction MOSFETs, International SiGe technology and device meeting (ISTDM2003), Nagoya, Japan, 15 - 17 January 2003, Pages: 91-93
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