Imperial College London
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ProfessorKristelFobelets

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor of Nanodevices
 
 
 
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Contact

 

+44 (0)20 7594 6236k.fobelets Website CV

 
 
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Assistant

 

Ms Susan Brace +44 (0)20 7594 6215

 
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Location

 

714Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Meziani:2013,
author = {Meziani, YM and Garcia-Garcia, E and Velazquez-Perez, JE and Coquillat, D and Dyakonova, N and Knap, W and Grigelionis, I and Fobelets, K},
journal = {Solid State Electronics},
pages = {113--117},
title = {Terahertz imaging using strained-Si MODFETs as sensors},
volume = {83},
year = {2013}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We report on non-resonant (broadband) and resonant detection of terahertz radiation using strained-Si modulation doped field effect transistors. The devices were excited at room temperature by two types of terahertz sources (an electronic source based on frequency multipliers at 0.292 THz and a pulsed parametric laser at 1.5 THz). In both cases, a non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas and photoresponse measurements were performed simultaneously and showed a phase-shift of π/2 in good agreement with the theory, which demonstrates that the observed response is related to the plasma waves oscillation in the channel. The non-resonant features were used to demonstrate the capabilities of such devices in terahertz imaging. We also cooled our device down to 4.2 K to increase the quality factor and resonant detection was observed by using a tunable source of terahertz radiation.
AU  - Meziani,YM
AU  - Garcia-Garcia,E
AU  - Velazquez-Perez,JE
AU  - Coquillat,D
AU  - Dyakonova,N
AU  - Knap,W
AU  - Grigelionis,I
AU  - Fobelets,K
EP  - 117
PY  - 2013///
SP  - 113
TI  - Terahertz imaging using strained-Si MODFETs as sensors
T2  - Solid State Electronics
VL  - 83
ER  -
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