Imperial College London
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ProfessorKristelFobelets

Faculty of Engineering, Department of Electrical and Electronic Engineering

Professor of Nanodevices
 
 
 
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Contact

 

+44 (0)20 7594 6236k.fobelets Website CV

 
 
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Assistant

 

Ms Susan Brace +44 (0)20 7594 6215

 
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Location

 

714Electrical EngineeringSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Qiao:2016:10.1016/j.electacta.2016.05.088,
author = {Qiao, L and Shougee, A and Albrecht, T and Fobelets, K},
doi = {10.1016/j.electacta.2016.05.088},
journal = {Electrochimica Acta},
pages = {32--37},
title = {Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid},
url = {http://dx.doi.org/10.1016/j.electacta.2016.05.088},
volume = {210},
year = {2016}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Improved performance of Si nanowire arrays for capacitor electrodes in ionic liquid [Bmim][NTf2], is obtained by spin-on-doping the nanowires followed by hot, concentrated nitric acid oxidation. n- and p-type Si nanowire arrays are fabricated via a 2-step metal-assisted chemical etch process to increase the effective surface area. Spin-on-doping increases the doping density of the nanowires, enhancing the current by a factor of more than 3. The well-controlled HNO3 oxidation defines a thin, dense oxide layer on the Si nanowires increasing chemical stability, both expanding the electrochemical window and increasing the current further by a factor >2. Specific capacitances of 238 μF cm−2 (∼0.4 F g−1, 159 mF cm−3) and 404 μF cm−2 (∼0.7 F g−1, 269 mF cm−3) are obtained for n- and p-type Si nanowire arrays, respectively.
AU  - Qiao,L
AU  - Shougee,A
AU  - Albrecht,T
AU  - Fobelets,K
DO  - 10.1016/j.electacta.2016.05.088
EP  - 37
PY  - 2016///
SN  - 0013-4686
SP  - 32
TI  - Oxide-coated silicon nanowire array capacitor electrodes in room temperature ionic liquid
T2  - Electrochimica Acta
UR  - http://dx.doi.org/10.1016/j.electacta.2016.05.088
UR  - http://hdl.handle.net/10044/1/38840
VL  - 210
ER  -
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