293 results found
McCulloch I, Heeney M, Chabinyc ML, et al., 2009, Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology, and Performance in Thin-Film Organic Transistors, ADVANCED MATERIALS, Vol: 21, Pages: 1091-1109, ISSN: 0935-9648
Hamilton R, Smith J, Ogier S, et al., 2009, High-Performance Polymer-Small Molecule Blend Organic Transistors, ADVANCED MATERIALS, Vol: 21, Pages: 1166-1171, ISSN: 0935-9648
Shoaee S, An Z, Zhang X, et al., 2009, Charge photogeneration in polythiophene-perylene diimide blend films, CHEMICAL COMMUNICATIONS, Pages: 5445-5447, ISSN: 1359-7345
Barard S, Heeney M, Chen L, et al., 2009, Separate charge transport pathways determined by the time of flight method in bimodal polytriarylamine, JOURNAL OF APPLIED PHYSICS, Vol: 105, ISSN: 0021-8979
Hamilton R, Heeney M, Anthopoulos T, et al., 2009, Development of polymer semiconductors for field-effect transistor devices in displays, Organic Electronics: Materials, Processing, Devices and Applications, Pages: 393-429, ISBN: 9781420072907
© 2010 by Taylor & Francis Group, LLC. The increasingly impressive electrical performance of organic semiconductors is driving the development of solution-based printing processes aimed at low cost fabrication of transistor devices. The most immediate application area will most likely be in active matrix displays, where transistors are used in the backplane circuitry, operating basically as an individual pixel switch. In liquid crystal displays (LCDs) and electrophoretic displays (EPDs), the transistor charges both the pixel and storage capacitor, whereas in an organic light-emitting diode display (OLED), the transistor delivers current to the diode element. Most medium and large size LCDs, i.e., monitor and television displays, employ amorphous silicon as the transistor semiconductor (high resolution displays often require polysilicon), with a charge carrier mobility of the order of 0.5 cm2/V s. The EPD effect can tolerate a lower performance from backplane transistors and is hence the most compatible with the performance limitations of organic transistors. As the EPD effect is reflective, the pixel transistor can occupy almost the full area underneath the pixel, in contrast to transmissive display effects such as LCD, where the opaque transistors block light from the backlight and therefore must be as small as possible (i.e., the pixel should have a high aperture ratio) to maximize the efficiency. This means that the EPD transistor width (W) is maximized and can deliver more current per pixel compensating for low mobility semiconductors. As a result, mobility specifications are in the region of 0.01 cm2/V s for a device with low refresh rates, low resolution, and small size. Another favorable aspect of the EPD effect is that once the pixel and storage capacitor is charged, no further power is required to retain the image, i.e., it is bistable. Thus the duty cycle load on the transistor is minimized, and subsequently the devices can potentially have long
McCulloch I, Heeney M, 2009, Flexible Electronics Materials and Applications, Publisher: Springer, ISBN: 978-0-387-74362-2
Smith J, Hamilton R, Heeney M, et al., 2008, High-performance organic integrated circuits based on solution processable polymer-small molecule blends, APPLIED PHYSICS LETTERS, Vol: 93, ISSN: 0003-6951
Crouch DJ, Skabara PJ, Heeney M, et al., 2008, Hexyl-Substituted Oligoselenophenes with Central Tetrafluorophenylene Units: Synthesis, Characterisation and Application in Organic Field Effect Transistors, MACROMOLECULAR RAPID COMMUNICATIONS, Vol: 29, Pages: 1839-1843, ISSN: 1022-1336
Mannsfeld SCB, Sharei A, Liu S, et al., 2008, Highly Efficient Patterning of Organic Single-Crystal Transistors from the Solution Phase, ADVANCED MATERIALS, Vol: 20, Pages: 4044-+, ISSN: 0935-9648
Grzegorczyk WJ, Savenije TJ, Heeney M, et al., 2008, Relationship between Film Morphology, Optical, and Conductive Properties of Poly(thienothiophene): [6,6]-Phenyl C-61-Butyric Acid Methyl Ester Bulk Heterojunctions, JOURNAL OF PHYSICAL CHEMISTRY C, Vol: 112, Pages: 15973-15979, ISSN: 1932-7447
Northrup JE, Chabinyc ML, Hamilton R, et al., 2008, Theoretical and experimental investigations of a polyalkylated-thieno[3,2-b]thiophene semiconductor, JOURNAL OF APPLIED PHYSICS, Vol: 104, ISSN: 0021-8979
Ballantyne AM, Chen L, Dane J, et al., 2008, The effect of poly(3-hexylthiophene) molecular weight on charge transport and the performance of polymer : fullerene solar cells, ADVANCED FUNCTIONAL MATERIALS, Vol: 18, Pages: 2373-2380, ISSN: 1616-301X
Li FM, Dhagat P, Haverinen HM, et al., 2008, Polymer thin film transistor without surface pretreatment on silicon nitride gate dielectric, APPLIED PHYSICS LETTERS, Vol: 93, ISSN: 0003-6951
DeLongchamp DM, Kline RJ, Jung Y, et al., 2008, Molecular basis of mesophase ordering in a thiophene-based copolymer, MACROMOLECULES, Vol: 41, Pages: 5709-5715, ISSN: 0024-9297
Anthony JE, Heeney M, Ong BS, 2008, Synthetic aspects of organic semiconductors, MRS BULLETIN, Vol: 33, Pages: 698-705, ISSN: 0883-7694
Hwang I-W, Kim JY, Cho S, et al., 2008, Bulk heterojunction materials composed of poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene): Ultrafast electron transfer and carrier recombination, JOURNAL OF PHYSICAL CHEMISTRY C, Vol: 112, Pages: 7853-7857, ISSN: 1932-7447
Moad AJ, DeLongchamp DM, Kline RJ, et al., 2008, COLL 369-Molecular characterization of the thermal phase behavior of two high performance semiconducting polymers, ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, Vol: 235, ISSN: 0065-7727
Parmer JE, Mayer AC, Hardin BE, et al., 2008, Organic bulk heterojunction solar cells using poly(2,5-bis(3-tetradecyllthiophen-2-yl)thieno[3,2,-b]thiophene), APPLIED PHYSICS LETTERS, Vol: 92, ISSN: 0003-6951
Ohkita H, Cook S, Astuti Y, et al., 2008, Charge carrier formation in polythiophene/fullerene blend films studied by transient absorption spectroscopy, JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, Vol: 130, Pages: 3030-3042, ISSN: 0002-7863
Jung Y, Kline RJ, Fischer DA, et al., 2008, The effect of interfacial roughness on the thin film morphology and charge transport of high-performance polythiophenes, ADVANCED FUNCTIONAL MATERIALS, Vol: 18, Pages: 742-750, ISSN: 1616-301X
Rawcliffe R, Shkunov M, Heeney M, et al., 2008, Organic field-effect transistors of poly(2,5-bis(3-dodecylthiophen-2-yl)- thieno[2,3-b]thiophene) deposited on five different silane self-assembled monolayers, Chemical Communications, Vol: 2008, Pages: 871-873
Depositing a fused-ring thieno-thiophene polymer on different self-assembled monolayers indicates that varying the SAM sur- face energy changes the FET mobility and turn-on voltage by varying polymer crystallinity at the buried interface.
Ishwara T, Bradley DDC, Nelson J, et al., 2008, Influence of polymer ionization potential on the open-circuit voltage of hybrid polymer/TiO(2) solar cells, APPLIED PHYSICS LETTERS, Vol: 92, ISSN: 0003-6951
Gather MC, Heeney M, Zhang W, et al., 2008, An alignable fluorene thienothiophene copolymer with deep-blue electroluminescent emission at 410 nm, CHEMICAL COMMUNICATIONS, Pages: 1079-1081, ISSN: 1359-7345
McCulloch I, Coelle M, Genevicius K, et al., 2008, Electrical properties of reactive liquid crystal semiconductors, International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, Publisher: JAPAN SOC APPLIED PHYSICS, Pages: 488-491, ISSN: 0021-4922
Heeney M, Zhang W, Tierney S, et al., 2008, WO2008011957. Substituted benzodithiophenes and benzodiselenophenes for use as semiconductors or charge transport materials in optical, electro-optical or electronic devices.
The invention relates to alkynyl substituted benzodithiophenes and benzodiselenophenes, their use esp. as semiconductors or charge transport materials in optical, electro-optical or electronic devices and to such devices comprising these materials. [on SciFinder(R)]
Heeney M, Zhang W, Tierney S, et al., 2008, WO2008077465. Polymers comprising fused selenophenes for use in optical, electrooptical and electronic devices.
Disclosed is a polymer (I), wherein one of X1 and X2 is Se and the other one is S or Se, R1 and R2 are independently of each other identical or different groups selected from H, halogen, -CN, -NC, -NCO, - NCS, -OCN, -SCN, -C(=O)NR0R00, -C(=O)X0, -C(=O)R0, -NH2, -NR0R0, -SH, -SR0, -SO3H, -SO2R0, -OH, -NO2, -CF3, -SF5, P-Sp-, optionally substituted silyl, or carbyl or hydrocarbyl with 1 to 40 C atoms which is/are optionally substituted and optionally comprise one or more hetero atoms, P is a polymerizable group, Sp is a spacer group or a single bond, X0 is halogen, R0 and R00 are independently of each other H or an optionally substituted aliph. or arom. hydrocarbon group having 1 to 20 C atoms, Ar is in case of multiple occurrence independently of one another -CY1=CY2, acetylene or mono- or polynuclear aryl or heteroraryl which is optionally substituted, Y1 and Y2 are independently of each other H, F, Cl or CN, m is 0-4, and n is an integer > 10. The invention relates to polymers comprising fused selenophene rings, to their use as semiconductors or charge transport materials in optical, electrooptical or electronic devices, and to optical, electrooptical or electronic devices comprising them. In the examples of the invention, first 2,5-Bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)selenopheno[3,2-b]thiophene was prepd. and (0.25 g, 0.56 mmol) of it was polymd. with (0.43 g, 0.56 mol) of 5,5'-dibromo-4,4'-dihexadecyl-2,2'-bithiophene by using Pd2[dba]3, tris-(tert-butyl) phosphine tetrafluoroborate and K2CO3 as catalysts, after pptn. and purifn. 0.37 g, 82 % of poly[5,5'-(4,4'-dihexadecyl-[2,2']bithiophene)-co-(selenopheno[3,2-b]thiophene)] was obtained. [on SciFinder(R)]
Hoffart T, Falk B, McCulloch I, et al., 2008, WO2008092490. Process for preparing regioregular polythiophenes and polyselenophenes.
The invention relates to a process for prepg. regioregular polymers, in particular head-to-tail (HT) poly(3-substituted) thiophenes and selenophenes, with high regioregularity and defined mol. wt., to the polymers prepd. by this process, and to the use of the polymers as semiconductors or charge transport materials in optical, electrooptical and electronic devices, including field effect transistors, electroluminescent, photovoltaic and sensor devices. Thus, 2,5-dibromo-3-hexylthiophene (3.5 kg) was dissolved in THF (18 kg) under N2, followed by adding a soln. of n-butylmagnesium chloride in THF (2M, 5.1 kg), and heating the mixt. to 25°. In parallel, 2,5-dibromo-3-hexylthiophene (87 g) was dissolved in THF (7.5 kg) in a sep. vessel under N2, followed by adding 1,3-bis(diphenylphosphino)propane (112 g) and Ni(COD)2 (73 g), stirring the mixt. at 60° for 10 min, and cooling to 25°. The catalyst mixt. was added to the Grignard mixt., and the system was heated to reflux for 5 min, followed by adding a soln. of n-butylmagnesium chloride in THF (2M, 0.7 kg), refluxing for 10 min, adding a 25%-aq. HCl soln. (8.5 kg) and methanol (40 kg) to obtain a polymer (73.4% yield) having a no.-av. mol. wt. of 19,770, a wt.-av. mol. wt. of 34,070, and a content of head-to-tail couplings of 94.7%. [on SciFinder(R)]
Heeney M, Zhang W, Mcculloch I, 2008, WO2008131835. Organic semiconductors.
The invention relates to novel substituted dibenzo[d,d']benzo[1,2-b;4,5-b']dithiophenes I [R1-R3 = halogen, CN, NC, NCO, NCS, OCN, SCN, CONR4R5, COX, COR4, NH2, NR4R5, SH, SR4, SO3H, SO2R4, OH, NO2, CF3, SF5, silyl, carbyl, hydrocarbyl, neighboring R1-R2 may form ring with each other or benzene ring, R1 and R2 may also be H; X = halogen; R4, R5 = H, aliph. or arom. hydrocarbyl having 1-20 C]. Methods of their synthesis, org. semiconducting material formulations and layers comprising them, and electronic devices like org. field effect transistors (OFETs) comprising them are also described. [on SciFinder(R)]
Tierney S, Heeney M, Bailey C, et al., 2008, WO2008128618. Process for preparing substituted pentacenes.
The invention relates to a process of prepg. substituted pentacenes, to novel pentacenes prepd. by this process, to the use of the novel pentacenes as semiconductors or charge transport materials in optical, electrooptical or electronic devices including field effect transistors (FETs), electroluminescent, photovoltaic and sensor devices, and to FETs and other semiconducting components or materials comprising the novel pentacenes. Thus, 1,4,8,11-tetramethyl-6,13-bis(triethylsilylethynyl)dentacene was prepd. and used as a semiconductor for an OFET device, showing high mobility and a high on/off ratio. [on SciFinder(R)]
Ballantyne AM, Chen L, Nelson J, et al., 2007, Studies of highly regioregular poly(3-hexylselenophene) for photovoltaic applications, ADVANCED MATERIALS, Vol: 19, Pages: 4544-+, ISSN: 0935-9648
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