Imperial College London

ProfessorMartinHeeney

Faculty of Natural SciencesDepartment of Chemistry

Professor of Organic Materials
 
 
 
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Contact

 

+44 (0)20 7594 1248m.heeney Website

 
 
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Location

 

401GMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Paterson:2019:10.1002/adma.201900871,
author = {Paterson, AF and Tsetseris, L and Li, R and Basu, A and Faber, H and Emwas, A-H and Panidi, J and Fei, Z and Niazi, MR and Anjum, DH and Heeney, M and Anthopoulos, TD},
doi = {10.1002/adma.201900871},
journal = {Adv Mater},
title = {Addition of the Lewis Acid Zn(C6 F5 )2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V-1 s-1.},
url = {http://dx.doi.org/10.1002/adma.201900871},
year = {2019}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.
AU - Paterson,AF
AU - Tsetseris,L
AU - Li,R
AU - Basu,A
AU - Faber,H
AU - Emwas,A-H
AU - Panidi,J
AU - Fei,Z
AU - Niazi,MR
AU - Anjum,DH
AU - Heeney,M
AU - Anthopoulos,TD
DO - 10.1002/adma.201900871
PY - 2019///
TI - Addition of the Lewis Acid Zn(C6 F5 )2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2 V-1 s-1.
T2 - Adv Mater
UR - http://dx.doi.org/10.1002/adma.201900871
UR - https://www.ncbi.nlm.nih.gov/pubmed/31074923
ER -