Imperial College London


Faculty of Natural SciencesDepartment of Chemistry

Professor of Organic Materials



+44 (0)20 7594 1248m.heeney Website




401GMolecular Sciences Research HubWhite City Campus






BibTex format

author = {Paterson, AF and Tsetseris, L and Li, R and Basu, A and Faber, H and Emwas, A-H and Panidi, J and Fei, Z and Niazi, MR and Anjum, DH and Heeney, M and Anthopoulos, TD},
doi = {10.1002/adma.201900871},
journal = {Advanced Materials},
title = {Addition of the lewis acid Zn(C6 F5 )2 enables organic transistors with a maximum hole mobility in excess of 20 cm2 V-1 s-1},
url = {},
volume = {31},
year = {2019}

RIS format (EndNote, RefMan)

AB - Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.
AU - Paterson,AF
AU - Tsetseris,L
AU - Li,R
AU - Basu,A
AU - Faber,H
AU - Emwas,A-H
AU - Panidi,J
AU - Fei,Z
AU - Niazi,MR
AU - Anjum,DH
AU - Heeney,M
AU - Anthopoulos,TD
DO - 10.1002/adma.201900871
PY - 2019///
SN - 0935-9648
TI - Addition of the lewis acid Zn(C6 F5 )2 enables organic transistors with a maximum hole mobility in excess of 20 cm2 V-1 s-1
T2 - Advanced Materials
UR -
UR -
UR -
VL - 31
ER -