Imperial College London

ProfessorMartinHeeney

Faculty of Natural SciencesDepartment of Chemistry

Professor of Organic Materials
 
 
 
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Contact

 

+44 (0)20 7594 1248m.heeney Website

 
 
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Location

 

133ChemistrySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Park:2011:10.1002/adma.201003641,
author = {Park, YM and Daniel, J and Heeney, M and Salleo, A},
doi = {10.1002/adma.201003641},
journal = {ADVANCED MATERIALS},
pages = {971--974},
title = {Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors},
url = {http://dx.doi.org/10.1002/adma.201003641},
volume = {23},
year = {2011}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AU - Park,YM
AU - Daniel,J
AU - Heeney,M
AU - Salleo,A
DO - 10.1002/adma.201003641
EP - 974
PY - 2011///
SN - 0935-9648
SP - 971
TI - Room-Temperature Fabrication of Ultrathin Oxide Gate Dielectrics for Low-Voltage Operation of Organic Field-Effect Transistors
T2 - ADVANCED MATERIALS
UR - http://dx.doi.org/10.1002/adma.201003641
UR - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000287669000003&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
VL - 23
ER -