Imperial College London
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ProfessorMartinHeeney

Faculty of Natural Sciences, Department of Chemistry

Professor of Organic Materials
 
 
 
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Contact

 

+44 (0)20 7594 1248m.heeney Website

 
 
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Location

 

401GMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Isakov:2016:10.1063/1.4972988,
author = {Isakov, I and Paterson, AF and Solomeshch, O and Tessler, N and Zhang, Q and Li, J and Zhang, X and Fei, Z and Heeney, M and Anthopoulos, TD},
doi = {10.1063/1.4972988},
journal = {Applied Physics Letters},
title = {Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm(2)/Vs},
url = {http://dx.doi.org/10.1063/1.4972988},
volume = {109},
year = {2016}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - We report the development of hybrid complementary inverters based on p-channel organic andn-channel metal oxide thin-film transistors (TFTs) both processed from solution at <200 C. For theorganic TFTs, a ternary blend consisting of the small-molecule 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene, the polymer indacenodithiophene-benzothiadiazole (C16IDT-BT) and the p-typedopant C60F48 was employed, whereas the isotype In2O3/ZnO heterojunction was used for the nchannelTFTs. When integrated on the same substrate, p- and n-channel devices exhibited balancedcarrier mobilities up to 10 cm2/Vs. Hybrid complementary inverters based on these devices show highsignal gain (>30 V/V) and wide noise margins (70%). The moderate processing temperaturesemployed and the achieved level of device performance highlight the tremendous potential of the technologyfor application in the emerging sector of large-area microelectronics.
AU  - Isakov,I
AU  - Paterson,AF
AU  - Solomeshch,O
AU  - Tessler,N
AU  - Zhang,Q
AU  - Li,J
AU  - Zhang,X
AU  - Fei,Z
AU  - Heeney,M
AU  - Anthopoulos,TD
DO  - 10.1063/1.4972988
PY  - 2016///
SN  - 1077-3118
TI  - Hybrid complementary circuits based on p-channel organic and n-channel metal oxide transistors with balanced carrier mobilities of up to 10 cm(2)/Vs
T2  - Applied Physics Letters
UR  - http://dx.doi.org/10.1063/1.4972988
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000392834000032&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - http://hdl.handle.net/10044/1/44781
VL  - 109
ER  -
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