Imperial College London
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Professor Martyn A McLachlan

Faculty of Engineering, Department of Materials

Professor of Thin Films, Interfaces and Electronic Devices
 
 
 
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Contact

 

+44 (0)20 7594 9692martyn.mclachlan Website

 
 
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Location

 

401 HMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Panidi:2019:10.1002/adfm.201902784,
author = {Panidi, J and Kainth, J and Paterson, AF and Wang, S and Tsetseris, L and Emwas, AH and McLachlan, MA and Heeney, M and Anthopoulos, TD},
doi = {10.1002/adfm.201902784},
journal = {Advanced Functional Materials},
pages = {1--10},
title = {Introducing a nonvolatile N-type dopant drastically improves electron transport in polymer and small-molecule organic transistors},
url = {http://dx.doi.org/10.1002/adfm.201902784},
volume = {29},
year = {2019}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - KGaA, Weinheim Molecular doping is a powerful yet challenging technique for enhancing charge transport in organic semiconductors (OSCs). While there is a wealth of research on p-type dopants, work on their n-type counterparts is comparatively limited. Here, reported is the previously unexplored n-dopant (12a,18a)-5,6,12,12a,13,18,18a,19-octahydro-5,6-dimethyl- 13,18[1′,2′]-benzenobisbenzimidazo [1,2-b:2′,1′-d]benzo[i][2.5]benzodiazo-cine potassium triflate adduct (DMBI-BDZC) and its application in organic thin-film transistors (OTFTs). Two different high electron mobility OSCs, namely, the polymer poly[[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2′-bithiophene)] and a small-molecule naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malononitrile groups (NDI-DTYM2) are used to study the effectiveness of DMBI-BDZC as a n-dopant. N-doping of both semiconductors results in OTFTs with improved electron mobility (up to 1.1 cm2 V−1 s−1), reduced threshold voltage and lower contact resistance. The impact of DMBI-BDZC incorporation is particularly evident in the temperature dependence of the electron transport, where a significant reduction in the activation energy due to trap deactivation is observed. Electron paramagnetic resonance measurements support the n-doping activity of DMBI-BDZC in both semiconductors. This finding is corroborated by density functional theory calculations, which highlights ground-state electron transfer as the main doping mechanism. The work highlights DMBI-BDZC as a promising n-type molecular dopant for OSCs and its application in OTFTs, solar cells, photodetectors, and thermoelectrics.
AU  - Panidi,J
AU  - Kainth,J
AU  - Paterson,AF
AU  - Wang,S
AU  - Tsetseris,L
AU  - Emwas,AH
AU  - McLachlan,MA
AU  - Heeney,M
AU  - Anthopoulos,TD
DO  - 10.1002/adfm.201902784
EP  - 10
PY  - 2019///
SN  - 1616-301X
SP  - 1
TI  - Introducing a nonvolatile N-type dopant drastically improves electron transport in polymer and small-molecule organic transistors
T2  - Advanced Functional Materials
UR  - http://dx.doi.org/10.1002/adfm.201902784
UR  - https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201902784
UR  - http://hdl.handle.net/10044/1/71735
VL  - 29
ER  -
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