Imperial College London
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Professor Martyn A McLachlan

Faculty of Engineering, Department of Materials

Professor of Thin Films, Interfaces and Electronic Devices
 
 
 
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Contact

 

+44 (0)20 7594 9692martyn.mclachlan Website

 
 
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Location

 

401 HMolecular Sciences Research HubWhite City Campus

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Summary

 

Publications

Citation

BibTex format

@article{Beesley:2014:10.1038/ncomms4933,
author = {Beesley, DJ and Semple, J and Krishnan, Jagadamma L and Amassian, A and McLachlan, MA and Anthopoulos, TD and DeMello, JC},
doi = {10.1038/ncomms4933},
journal = {Nat Commun},
title = {Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography},
url = {http://dx.doi.org/10.1038/ncomms4933},
volume = {5},
year = {2014}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Coplanar electrodes formed from asymmetric metals separated on the nanometre length scale are essential elements of nanoscale photonic and electronic devices. Existing fabrication methods typically involve electron-beam lithography—a technique that enables high fidelity patterning but suffers from significant limitations in terms of low throughput, poor scalability to large areas and restrictive choice of substrate and electrode materials. Here, we describe a versatile method for the rapid fabrication of asymmetric nanogap electrodes that exploits the ability of selected self-assembled monolayers to attach conformally to a prepatterned metal layer and thereby weaken adhesion to a subsequently deposited metal film. The method may be carried out under ambient conditions using simple equipment and a minimum of processing steps, enabling the rapid fabrication of nanogap electrodes and optoelectronic devices with aspect ratios in excess of 100,000.
AU  - Beesley,DJ
AU  - Semple,J
AU  - Krishnan,Jagadamma L
AU  - Amassian,A
AU  - McLachlan,MA
AU  - Anthopoulos,TD
AU  - DeMello,JC
DO  - 10.1038/ncomms4933
PY  - 2014///
TI  - Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography
T2  - Nat Commun
UR  - http://dx.doi.org/10.1038/ncomms4933
UR  - http://hdl.handle.net/10044/1/23388
VL  - 5
ER  -
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