Imperial College London
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ProfessorNorbertKlein

Faculty of Engineering, Department of Materials

Chair in Electromagnetic Nanomaterials
 
 
 
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Contact

 

+44 (0)20 7594 6783n.klein Website

 
 
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Location

 

RSM 201CRoyal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Goniszewski:2016:10.1038/srep22858,
author = {Goniszewski, S and Adabi, M and Shaforost, O and Hanham, S and Hao, L and Klein, N},
doi = {10.1038/srep22858},
journal = {Scientific Reports},
title = {Correlation of p-doping in CVD Graphene with Substrate Surface Charges},
url = {http://dx.doi.org/10.1038/srep22858},
volume = {6},
year = {2016}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO2) substrates prior to CVD graphene transfer are measured. Beginning with graphene on untreated thermal oxidised silicon, a minimum conductivity (σmin) occurring at gate voltage Vg = 15 V (Dirac Point) is measured. It was found that more aggressive treatments (O2 plasma and UV Ozone treatments) further increase the gate voltage of the Dirac point up to 65 V, corresponding to a significant increase of the level of p-doping displayed in the graphene. An electrowetting model describing the measured relationship between the contact angle (θ) of a water droplet applied to the treated substrate/graphene surface and an effective gate voltage from a surface charge density is proposed to describe biasing of Vg at σmin and was found to fit the measurements with multiplication of a correction factor, allowing effective non-destructive approximation of substrate added charge carrier density using contact angle measurements.
AU  - Goniszewski,S
AU  - Adabi,M
AU  - Shaforost,O
AU  - Hanham,S
AU  - Hao,L
AU  - Klein,N
DO  - 10.1038/srep22858
PY  - 2016///
SN  - 2045-2322
TI  - Correlation of p-doping in CVD Graphene with Substrate Surface Charges
T2  - Scientific Reports
UR  - http://dx.doi.org/10.1038/srep22858
UR  - http://hdl.handle.net/10044/1/30393
VL  - 6
ER  -
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