Imperial College London


Faculty of EngineeringDepartment of Materials

Honorary Lecturer





LM04Royal School of MinesSouth Kensington Campus






BibTex format

author = {Reale, F and Palczynski, P and Amit, I and Jones, GF and Mehew, JD and Bacon, A and Ni, N and Sherrell, PC and Agnoli, S and Craciun, MF and Russo, S and Mattevi, C},
doi = {10.1038/s41598-017-14928-2},
journal = {Scientific Reports},
title = {High-Mobility and High-Optical Quality Atomically Thin WS2},
url = {},
volume = {7},
year = {2017}

RIS format (EndNote, RefMan)

AB - The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used direct sulfidization of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.
AU - Reale,F
AU - Palczynski,P
AU - Amit,I
AU - Jones,GF
AU - Mehew,JD
AU - Bacon,A
AU - Ni,N
AU - Sherrell,PC
AU - Agnoli,S
AU - Craciun,MF
AU - Russo,S
AU - Mattevi,C
DO - 10.1038/s41598-017-14928-2
PY - 2017///
SN - 2045-2322
TI - High-Mobility and High-Optical Quality Atomically Thin WS2
T2 - Scientific Reports
UR -
UR -
VL - 7
ER -