Imperial College London

Peter Haynes

Faculty of EngineeringDepartment of Materials

Head of Department of Materials
 
 
 
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Contact

 

+44 (0)20 7594 5158p.haynes Website CV

 
 
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Assistant

 

Miss Catherine Graham +44 (0)20 7594 3330

 
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Location

 

201BRoyal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{von:2006:10.1103/PhysRevLett.96.055505,
author = {von, Alfthan S and Haynes, PD and Kaski, K and Sutton, AP},
doi = {10.1103/PhysRevLett.96.055505},
journal = {PHYS REV LETT},
title = {Are the structures of twist grain boundaries in silicon ordered at 0 K?},
url = {http://dx.doi.org/10.1103/PhysRevLett.96.055505},
volume = {96},
year = {2006}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - Contrary to previous simulation results on the existence of amorphous intergranular films at high-angle twist grain boundaries (GBs) in elemental solids such as silicon, recent experimental results imply structural order in some high-angle boundaries. With a novel protocol for simulating twist GBs, which allows the number of atoms at the boundary to vary, we have found new low-energy ordered structures. We give a detailed exposition of the results for the simplest boundary. The validity of our results is confirmed by first-principles calculations.
AU - von,Alfthan S
AU - Haynes,PD
AU - Kaski,K
AU - Sutton,AP
DO - 10.1103/PhysRevLett.96.055505
PY - 2006///
SN - 0031-9007
TI - Are the structures of twist grain boundaries in silicon ordered at 0 K?
T2 - PHYS REV LETT
UR - http://dx.doi.org/10.1103/PhysRevLett.96.055505
UR - http://www.cmth.ph.ic.ac.uk/people/p.haynes/papers/paper19.html
VL - 96
ER -