Imperial College London
Alternate

ProfessorRupertOulton

Faculty of Natural Sciences, Department of Physics

Professor of Nanophotonics
 
 
 
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Contact

 

+44 (0)20 7594 7576r.oulton

 
 
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Location

 

914Blackett LaboratorySouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Matsui:2018:10.1002/adfm.201705829,
author = {Matsui, T and Li, Y and Hsu, M-HM and Merckling, C and Oulton, RF and Cohen, LF and Maier, SA},
doi = {10.1002/adfm.201705829},
journal = {ADVANCED FUNCTIONAL MATERIALS},
title = {Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface},
url = {http://dx.doi.org/10.1002/adfm.201705829},
volume = {28},
year = {2018}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - Extracting plasmoninduced hot carriers over a metal–semiconductor Schottky barrier enables photodetection below the semiconductor bandgap energy. However, interfacial carrier recombination hinders the efficiency and stability of this process, severely limiting its implementation in telecommunication. This study proposes and demonstrates the use of epitaxially grown latticematched SrTiO3 for interfacial passivation of siliconbased plasmonic Schottky devices. The devices are activated by an electrical softbreakdown of the interfacial SrTiO3 layer, resulting in reproducible rectified Schottky characteristics. The transition to a low resistance state of the SrTiO3 layer boosts the extraction efficiency of hot holes upon resonant plasmonic excitation, giving rise to a two orders of magnitude higher photocurrent compared to devices with a native oxide layer. Photoresponse, tunability, and barrier height studies under reverse biases as high as 100 V present superior stability with the incorporation of the SrTiO3 layer. The investigation paves the way toward plasmoninduced photodetection for practical applications including those under challenging operating conditions.
AU  - Matsui,T
AU  - Li,Y
AU  - Hsu,M-HM
AU  - Merckling,C
AU  - Oulton,RF
AU  - Cohen,LF
AU  - Maier,SA
DO  - 10.1002/adfm.201705829
PY  - 2018///
SN  - 1616-301X
TI  - Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface
T2  - ADVANCED FUNCTIONAL MATERIALS
UR  - http://dx.doi.org/10.1002/adfm.201705829
UR  - http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000430658300002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - http://hdl.handle.net/10044/1/60108
VL  - 28
ER  -
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