BibTex format
@inproceedings{München and Matsui:2018,
author = {München and Matsui, T and Li, Y and Oulton, RF and Cohen, LF and Maier, SA},
title = {Plasmonic hot carrier detection via SrTiO<inf>3</inf> interfacial layer},
year = {2018}
}
Publications
Citation
RIS format (EndNote, RefMan)
TY - CPAPER
AB - Energetic hot carrier injection from metal plasmonic structure to adjacent semiconductor lies at the center of the application of non-radiative decays, photochemical reactions and energy harvesting. Plasmonic hot-electron devices, till now, have been highly focused on a Schottky barrier structures to separate the energetic carriers before the thermalization. For instance, much efforts were putted in exploring high absorption structure with enough thin metal; enough thin compared to mean free path. However, interfacial engineering of the device; exploring a new device structure, have not been fully investigated.
AU - München
AU - Matsui,T
AU - Li,Y
AU - Oulton,RF
AU - Cohen,LF
AU - Maier,SA
PY - 2018///
TI - Plasmonic hot carrier detection via SrTiO<inf>3</inf> interfacial layer
ER -