BibTex format
@inproceedings{Kirby:2000,
author = {Kirby, P and Su, QX and Komuro, E and Imura, M and Zhang, Q and Whatmore, R},
pages = {5--7},
title = {High frequency thin film ferroelectric acoustic resonators},
year = {2000}
}
Publications
Citation
RIS format (EndNote, RefMan)
TY - CPAPER
AB - The features and benefits of thin films bulk acoustic resonators (FBAR) are discussed. The FBAR are best suited for future mobile communication system as they are compact, have low-loss and are largely compatible with the existing high frequency Si/GaAs IC processing. A FBAR is a resonant piezoelectric device similar to the quartz resonators, which consists of piezoelectric layer sandwich between two electrodes. Larger 3 dB bandwidths can be obtained from PZT FBAR filters due to the larger electromechanical coupling coefficient for PZT.
AU - Kirby,P
AU - Su,QX
AU - Komuro,E
AU - Imura,M
AU - Zhang,Q
AU - Whatmore,R
EP - 7
PY - 2000///
SN - 0963-3308
SP - 5
TI - High frequency thin film ferroelectric acoustic resonators
ER -