BibTex format
@inbook{Durrani:2007,
author = {Durrani, ZAK and Ahmed, H},
booktitle = {Nanosilicon},
editor = {Kumar},
publisher = {Elsevier Press},
title = {Nanosilicon single-electron transistors and memory},
year = {2007}
}
Publications
Citation
RIS format (EndNote, RefMan)
TY - CHAP
AB - Nanosilicon materials are promising systems for the fabrication of single-electron transistor and memory devices in silicon. In these devices, precise control over the charging of a nanometre-size ‘island’ by just one electron raises the possibility of low power, highly scaled integrated circuits with one electron per bit. Nanosilicon materials, consisting of crystalline silicon grains ~10 nm in size, provide a means to fabricate ultra-small charging islands using growth techniques rather than high-resolution lithography. It is then possible to fabricate single-electron devices operating at room temperature. This review introduces electron transport in nanosilicon and considers the design and fabrication of single-electron transistors, quantum-dot transistors, and few-electron memory cells in these materials
AU - Durrani,ZAK
AU - Ahmed,H
PB - Elsevier Press
PY - 2007///
SN - 978-0-08-044528-1
TI - Nanosilicon single-electron transistors and memory
T1 - Nanosilicon
ER -