TY - JOUR AB - We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h−BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene. AU - Wong,D AU - Wang,Y AU - Jin,W AU - Tsai,H-Z AU - Bostwick,A AU - Rotenberg,E AU - Kawakami,R AU - Zettl,A AU - Mostofi,A AU - Lischner,J AU - Crommie,M DO - 10.1103/PhysRevB.98.155436 PY - 2018/// SN - 1098-0121 TI - Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices T2 - Physical review B: Condensed matter and materials physics UR - http://dx.doi.org/10.1103/PhysRevB.98.155436 UR - http://hdl.handle.net/10044/1/65198 VL - 98 ER -