Citation

BibTex format

@article{Yamaguchi:2016:10.1002/pssa.201532855,
author = {Yamaguchi, H and Ogawa, S and Watanabe, D and Hozumi, H and Gao, Y and Eda, G and Mattevi, C and Fujita, T and Yoshigoe, A and Ishizuka, S and Adamska, L and Yamada, T and Dattelbaum, AM and Gupta, G and Doorn, SK and Velizhanin, KA and Teraoka, Y and Chen, M and Htoon, H and Chhowalla, M and Mohite, AD and Takakuwa, Y},
doi = {10.1002/pssa.201532855},
journal = {Physica Status Solidi (A) Applications and Materials Science},
pages = {2380--2386},
title = {Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics},
url = {http://dx.doi.org/10.1002/pssa.201532855},
volume = {213},
year = {2016}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AB - © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600 °C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart.
AU - Yamaguchi,H
AU - Ogawa,S
AU - Watanabe,D
AU - Hozumi,H
AU - Gao,Y
AU - Eda,G
AU - Mattevi,C
AU - Fujita,T
AU - Yoshigoe,A
AU - Ishizuka,S
AU - Adamska,L
AU - Yamada,T
AU - Dattelbaum,AM
AU - Gupta,G
AU - Doorn,SK
AU - Velizhanin,KA
AU - Teraoka,Y
AU - Chen,M
AU - Htoon,H
AU - Chhowalla,M
AU - Mohite,AD
AU - Takakuwa,Y
DO - 10.1002/pssa.201532855
EP - 2386
PY - 2016///
SN - 1862-6300
SP - 2380
TI - Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics
T2 - Physica Status Solidi (A) Applications and Materials Science
UR - http://dx.doi.org/10.1002/pssa.201532855
UR - http://hdl.handle.net/10044/1/30937
VL - 213
ER -