@unpublished{Carey:2020,
author = {Carey, T and Arbab, A and Anzi, L and Bristow, H and Hui, F and Bohm, S and Wyatt-Moon, G and Flewitt, A and Wadsworth, A and Gasparini, N and Kim, JM and Lanza, M and McCulloch, I and Sordan, R and Torrisi, F},
publisher = {arXiv},
title = {Inkjet printed circuits with two-dimensional semiconductor inks for  high-performance electronics},
url = {http://arxiv.org/abs/2011.12359v1},
year = {2020}
}

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TY  - UNPB
AB  - Air-stable semiconducting inks suitable for complementary logic are key tocreate low-power printed integrated circuits (ICs). High-performance printableelectronic inks with two-dimensional materials have the potential to enable thenext generation of high performance, low-cost printed digital electronics. Herewe demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printedn-type molybdenum disulfide (MoS2) and p-typeindacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors(FETs), estimating a switching time of {\tau} ~ 3.3 {\mu}s for the MoS2 FETs.We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inkssuitable for inkjet-printing complementary pairs of n-type MoS2 and p-typeIDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printedcomplementary logic inverters with a voltage gain |Av| ~ 4 when in resistiveload configuration and |Av| ~ 1.36 in complementary configuration. Theseresults represent a key enabling step towards ubiquitous long-term stable,low-cost printed digital ICs.
AU  - Carey,T
AU  - Arbab,A
AU  - Anzi,L
AU  - Bristow,H
AU  - Hui,F
AU  - Bohm,S
AU  - Wyatt-Moon,G
AU  - Flewitt,A
AU  - Wadsworth,A
AU  - Gasparini,N
AU  - Kim,JM
AU  - Lanza,M
AU  - McCulloch,I
AU  - Sordan,R
AU  - Torrisi,F
PB  - arXiv
PY  - 2020///
TI  - Inkjet printed circuits with two-dimensional semiconductor inks for  high-performance electronics
UR  - http://arxiv.org/abs/2011.12359v1
UR  - http://hdl.handle.net/10044/1/88004
ER  - 

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