BibTex format

author = {Liu, W and Guo, N-J and Yu, S and Meng, Y and Li, Z-P and Yang, Y-Z and Wang, Z-A and Zeng, X-D and Xie, L-K and Li, Q and Wang, J-F and Xu, J-S and Wang, Y-T and Tang, J-S and Li, C-F and Guo, G-C},
doi = {2633-4356/ac7e9f},
journal = {Materials for Quantum Technology},
pages = {032002--032002},
title = {Spin-active defects in hexagonal boron nitride},
url = {},
volume = {2},
year = {2022}

RIS format (EndNote, RefMan)

AB - <jats:title>Abstract</jats:title> <jats:p>Quantum technology grown out of quantum information theory, including quantum communication, quantum computation and quantum sensing, not only provides powerful research tools for numerous fields, but also is expected to go to civilian use in the future. Solid-state spin-active defects are one of promising platforms for quantum technology, and the host materials include three-dimensional diamond and silicon carbide, and the emerging two-dimensional hexagonal boron nitride (hBN) and transition-metal dichalcogenides. In this review, we will focus on the spin defects in hBN, and summarize theoretical and experimental progresses made in understanding properties of these spin defects. In particular, the combination of theoretical prediction and experimental verification is highlighted. We also discuss the future advantages and challenges of solid-state spins in hBN on the path towards quantum information applications.</jats:p>
AU - Liu,W
AU - Guo,N-J
AU - Yu,S
AU - Meng,Y
AU - Li,Z-P
AU - Yang,Y-Z
AU - Wang,Z-A
AU - Zeng,X-D
AU - Xie,L-K
AU - Li,Q
AU - Wang,J-F
AU - Xu,J-S
AU - Wang,Y-T
AU - Tang,J-S
AU - Li,C-F
AU - Guo,G-C
DO - 2633-4356/ac7e9f
EP - 032002
PY - 2022///
SP - 032002
TI - Spin-active defects in hexagonal boron nitride
T2 - Materials for Quantum Technology
UR -
VL - 2
ER -