@article{Fontein:1989:10.1117/12.950344,
author = {Fontein, PF and Hendriks, P and Wolter, J and Kucernak, A and Peat, R and Williams, DE},
doi = {10.1117/12.950344},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
pages = {197--201},
title = {Topography of GaAs/AlGaAs heterostructures using the lateral photo effect},
url = {http://dx.doi.org/10.1117/12.950344},
volume = {1028},
year = {1989}
}

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TY  - JOUR
AB  - We studied the lateral photo effect in CaAs/A1xGa1-xAs heterostructures both theoretically and experimentally. We observe a linear dependence of the photo voltage as a function of the position of the light spot. In our model this corresponds to a recombination length of the spatially separated electrons and holes longer than the length of the sample (1 mm). Deviations of this linear dependence are a direct indication of inhomogeneities in the conductive properties of the two-dimensional electron gas at the interface of the heterostructure. Results are shown in which long (1 mm) but very narrow cracks are seen. © 1989 SPIE.
AU  - Fontein,PF
AU  - Hendriks,P
AU  - Wolter,J
AU  - Kucernak,A
AU  - Peat,R
AU  - Williams,DE
DO  - 10.1117/12.950344
EP  - 201
PY  - 1989///
SN  - 0277-786X
SP  - 197
TI  - Topography of GaAs/AlGaAs heterostructures using the lateral photo effect
T2  - Proceedings of SPIE - The International Society for Optical Engineering
UR  - http://dx.doi.org/10.1117/12.950344
VL  - 1028
ER  - 

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