@article{Voigt:2010:10.1002/adfm.200901597,
author = {Voigt, MM and Guite, A and Chung, D-Y and Khan, RUA and Campbell, AJ and Bradley, DDC and Meng, F and Steinke, JHG and Tierney, S and McCulloch, I and Penxten, H and Lutsen, L and Douheret, O and Manca, J and Brokmann, U and Soennichsen, K and Huelsenberg, D and Bock, W and Barron, C and Blanckaert, N and Springer, S and Grupp, J and Mosley, A},
doi = {10.1002/adfm.200901597},
journal = {ADVANCED FUNCTIONAL MATERIALS},
pages = {239--246},
title = {Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate},
url = {http://dx.doi.org/10.1002/adfm.200901597},
volume = {20},
year = {2010}
}

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TY  - JOUR
AU  - Voigt,MM
AU  - Guite,A
AU  - Chung,D-Y
AU  - Khan,RUA
AU  - Campbell,AJ
AU  - Bradley,DDC
AU  - Meng,F
AU  - Steinke,JHG
AU  - Tierney,S
AU  - McCulloch,I
AU  - Penxten,H
AU  - Lutsen,L
AU  - Douheret,O
AU  - Manca,J
AU  - Brokmann,U
AU  - Soennichsen,K
AU  - Huelsenberg,D
AU  - Bock,W
AU  - Barron,C
AU  - Blanckaert,N
AU  - Springer,S
AU  - Grupp,J
AU  - Mosley,A
DO  - 10.1002/adfm.200901597
EP  - 246
PY  - 2010///
SN  - 1616-301X
SP  - 239
TI  - Polymer Field-Effect Transistors Fabricated by the Sequential Gravure Printing of Polythiophene, Two Insulator Layers, and a Metal Ink Gate
T2  - ADVANCED FUNCTIONAL MATERIALS
UR  - http://dx.doi.org/10.1002/adfm.200901597
UR  - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000274269300008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL  - 20
ER  - 

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