Imperial College London


Faculty of EngineeringDepartment of Materials

Honorary Lecturer



+44 (0)20 7594 9693a.harrison




B323Bessemer BuildingSouth Kensington Campus





Dr Alison Harrison was appointed to a Lectureship in Nanometrology at the Department of Materials at Imperial College and the London Centre for Nanotechnology in August 2007.  Alison obtained her first degree (1999) and her Ph.D. (2002) from the University of Cambridge.

Her research interests include the development of electron microscopy techniques for the examination of novel nanostructures including semiconductor and ferroelectric devices, and the development of equipment for the application of electrical bias to specimens in situ in the transmission and scanning electron microscopes. In particular, her research has focused on the development of electron holography as a quantitative tool for the characterisation of dopant potentials in semiconductor device structures, and its combination with electron tomography to allow 3D mapping of nanostructures.



Cooper D, Truche R, Twitchett-Harrison AC, et al., 2009, Quantitative off-axis electron holography of GaAs p-n junctions prepared by focused ion beam milling, Journal of Microscopy, Vol:233, ISSN:0022-2720, Pages:102-113

Twitchett-Harrison AC, Yates TJV, Dunin-Borkowski RE, et al., 2008, Quantitative electron holographic tomography for the 3D characterisation of semiconductor device structures, Ultramicroscopy, Vol:108, ISSN:0304-3991, Pages:1401-1407

Twitchett-Harrison AC, Dunin-Borkowski RE, Midgley P-A, 2008, Mapping the electrical properties of semiconductor junctions - the electron holographic approach, Scanning, Vol:30, ISSN:0161-0457, Pages:299-309


Twitchett-Harrison AC, Dunin-Borkowski RE, Midgley PA, 2008, 3-D Characterisation of the Electrostatic Potential in an Electrically Biased Silicon Device, 15th Conference on Microscopy of Semiconducting Materials, SPRINGER-VERLAG BERLIN, Pages:379-382, ISSN:0930-8989

Twitchett-Harrison AC, Dunin-Borkowski RE, Midgley PA, 2008, Critical Thickness for Semiconductor Specimens Prepared using Focused Ion Beam Milling, 15th Conference on Microscopy of Semiconducting Materials, SPRINGER-VERLAG BERLIN, Pages:445-448, ISSN:0930-8989

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