BibTex format
@article{SKURAS:1991:6/023,
author = {SKURAS, E and KUMAR, R and WILLIAMS, RL and STRADLING, RA and DMOCHOWSKI, JE and JOHNSON, EA and MACKINNON, A and HARRIS, JJ and BEALL, RB and SKIERBESZEWSKI, C and SINGLETON, J and VANDERWEL, PJ and WISNIEWSKI, P},
doi = {6/023},
journal = {SEMICONDUCTOR SCIENCE AND TECHNOLOGY},
pages = {535--546},
title = {SUBBAND DEPENDENT MOBILITIES AND CARRIER SATURATION MECHANISMS IN THIN SI DOPING LAYERS IN GAAS IN THE HIGH-DENSITY LIMIT},
url = {http://dx.doi.org/10.1088/0268-1242/6/6/023},
volume = {6},
year = {1991}
}