Imperial College London
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DrAnnaRegoutz

Faculty of Engineering, Department of Materials

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Contact

 

a.regoutz Website

 
 
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Location

 

2.M14Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Berens:2020:2515-7655/ab8c5e,
author = {Berens, J and Bichelmaier, S and Fernando, NK and Thakur, PK and Lee, T-L and Mascheck, M and Wiell, T and Eriksson, SK and Matthias, Kahk J and Lischner, J and Mistry, M and Aichinger, T and Pobegen, G and Regoutz, A},
doi = {2515-7655/ab8c5e},
journal = {The Journal of High Energy Physics},
pages = {1--11},
title = {Effects of nitridation on SiC/SiO(2)structures studied by hard X-ray photoelectron spectroscopy},
url = {http://dx.doi.org/10.1088/2515-7655/ab8c5e},
volume = {2},
year = {2020}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AB  - SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO2. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard x-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO2 and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.
AU  - Berens,J
AU  - Bichelmaier,S
AU  - Fernando,NK
AU  - Thakur,PK
AU  - Lee,T-L
AU  - Mascheck,M
AU  - Wiell,T
AU  - Eriksson,SK
AU  - Matthias,Kahk J
AU  - Lischner,J
AU  - Mistry,M
AU  - Aichinger,T
AU  - Pobegen,G
AU  - Regoutz,A
DO  - 2515-7655/ab8c5e
EP  - 11
PY  - 2020///
SN  - 1029-8479
SP  - 1
TI  - Effects of nitridation on SiC/SiO(2)structures studied by hard X-ray photoelectron spectroscopy
T2  - The Journal of High Energy Physics
UR  - http://dx.doi.org/10.1088/2515-7655/ab8c5e
UR  - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000569872700001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
UR  - https://iopscience.iop.org/article/10.1088/2515-7655/ab8c5e
UR  - http://hdl.handle.net/10044/1/104762
VL  - 2
ER  -
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