Imperial College London

DrAnnaRegoutz

Faculty of EngineeringDepartment of Materials

Academic Visitor
 
 
 
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Contact

 

a.regoutz Website

 
 
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Location

 

2.M14Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Isakov:2020:10.1002/aelm.202000682,
author = {Isakov, I and Faber, H and Mottram, AD and Das, S and Grell, M and Regoutz, A and Kilmurray, R and McLachlan, MA and Payne, DJ and Anthopoulos, TD},
doi = {10.1002/aelm.202000682},
journal = {ADVANCED ELECTRONIC MATERIALS},
title = {Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In<sub>2</sub>O<sub>3</sub>Transistors},
url = {http://dx.doi.org/10.1002/aelm.202000682},
volume = {6},
year = {2020}
}

RIS format (EndNote, RefMan)

TY  - JOUR
AU - Isakov,I
AU - Faber,H
AU - Mottram,AD
AU - Das,S
AU - Grell,M
AU - Regoutz,A
AU - Kilmurray,R
AU - McLachlan,MA
AU - Payne,DJ
AU - Anthopoulos,TD
DO - 10.1002/aelm.202000682
PY - 2020///
SN - 2199-160X
TI - Quantum Confinement and Thickness-Dependent Electron Transport in Solution-Processed In<sub>2</sub>O<sub>3</sub>Transistors
T2 - ADVANCED ELECTRONIC MATERIALS
UR - http://dx.doi.org/10.1002/aelm.202000682
UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000574857800001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL - 6
ER -