Imperial College London
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DrAnnaRegoutz

Faculty of Engineering, Department of Materials

Academic Visitor
 
 
 
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Contact

 

a.regoutz Website

 
 
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Location

 

2.M14Royal School of MinesSouth Kensington Campus

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Summary

 

Publications

Citation

BibTex format

@article{Swallow:2021:10.1021/acsami.0c16021,
author = {Swallow, JEN and Palgrave, RG and Murgatroyd, PAE and Regoutz, A and Lorenz, M and Hassa, A and Grundmann, M and von, Wenckstern H and Varley, JB and Veal, TD},
doi = {10.1021/acsami.0c16021},
journal = {ACS APPLIED MATERIALS & INTERFACES},
pages = {2807--2819},
title = {Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors},
url = {http://dx.doi.org/10.1021/acsami.0c16021},
volume = {13},
year = {2021}
}
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RIS format (EndNote, RefMan)

TY  - JOUR
AU  - Swallow,JEN
AU  - Palgrave,RG
AU  - Murgatroyd,PAE
AU  - Regoutz,A
AU  - Lorenz,M
AU  - Hassa,A
AU  - Grundmann,M
AU  - von,Wenckstern H
AU  - Varley,JB
AU  - Veal,TD
DO  - 10.1021/acsami.0c16021
EP  - 2819
PY  - 2021///
SN  - 1944-8244
SP  - 2807
TI  - Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors
T2  - ACS APPLIED MATERIALS & INTERFACES
UR  - http://dx.doi.org/10.1021/acsami.0c16021
UR  - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000612551400062&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
VL  - 13
ER  -
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